Power Field-Effect Transistor, 4A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1439660220 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (Abs) (ID) | 4 A |
| Maximum drain current (ID) | 4 A |
| Maximum drain-source on-resistance | 0.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL |
| Maximum power dissipation(Abs) | 15 W |
| Maximum pulsed drain current (IDM) | 16 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
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