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2N7288R1

Description
9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

2N7288R1 Overview

9A, 250V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

2N7288R1 Parametric

Parameter NameAttribute value
Objectid1437972406
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.415 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)27 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
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