JANTXV2N3821 datasheet, PDF - EEWORLD Datasheet

The documentation and process

conversion measures necessary to comply

with this revision shall be completed by

19 June 2003.

INCH-POUND

MIL-PRF-19500/375F

19 March 2003

SUPERSEDING

MIL-PRF-19500/375E

2 October 2001

PERFORMANCE SPECIFICATION

* SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE,

SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon, field-effect

depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500.

* 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount).

* 1.3 Maximum ratings.

P

T

(1)

T

A

= +25°C

V

DG

and V

DS

2N3821

2N3822

2N3823

2N3821UB 2N3822UB 2N3823UB

V dc

50

V dc

50

V dc

30

2N3821

2N3821UB

V dc

50

V

GSR

2N3822

2N3822UB

V dc

50

2N3823

2N3823UB

V dc

30

I

GF

T

op

and T

STG

°C

-55 to +200

mW

300

mA dc

10

(1) Derate linearly, 1.7 mW/°C for T

A

≥

+25°C.

* 1.4 Primary electrical characteristics.

I

DSS

(1)

V

DS

= 15 V dc

V

GS

= 0

V

GS(off)

V

DS

= 15 V dc

I

D

= 0.5 nA dc

V

DS

= 15 V dc

V

GS

= 0,

R

G

= 1 MΩ

f = 10 Hz

2N3823

2N3823UB

2N3821

2N3822

2N3821UB 2N3822UB

N

F

V

DS

= 15 V V

DS

= 15 V

dc

V

GS

= 0,

V

GS

= 0,

R

G

= 1 MΩ R

G

= 1 MΩ

f = 1 kHz f = 105 MHz

All

types

2N3823

2N3823UB

2N3821

2N3822

2N3823

2N3821UB 2N3822UB 2N3823UB

2N3821

2N3821UB

2N3822

2N3822UB

mA dc

Min

Max

0.5

2.5

mA dc

2.0

10.0

mA dc

4.0

20.0

V dc

dB

4.0

6.0

8.0

5.0

2.5

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/375F

* 1.4 Primary electrical characteristics - Continued.

|y

fs

|1 (1)

V

DS

= 15 V dc

f = 1 kHz

V

GS

= 0

2N3821

2N3821UB

2N3822

2N3822UB

2N3823

2N3823UB

|y

fs

|3

V

DS

= 15 V dc

V

GS

= 0

f = 100

f = 200

MHz

2N3821

2N3821UB

2N3822

2N3822UB

2N3823

2N3823UB

C

iss

V

DS

= 15 V

dc

V

GS

= 0

100 kHz

≤

f

≤

1 MHz

C

rss

V

DS

= 15 V dc

V

GS

= 0

100 kHz

≤

f

≤

1 MHz

2N3821

2N3821UB

2N3822

2N3822UB

2N3823

2N3823UB

µs

Min

Max

1,500

4,500

µs

3,000

6,500

µs

3,500

6,500

µs

1,500

µs

3,000

µs

3,200

pF

6

3

2

(1) Pulsed (see 4.5.1).

2 APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

2

MIL-PRF-19500/375F

Ltr

Inches

Min

CD

CH

HD

L1

L2

LC

LD

LL

LU

Q

r

TL

TW

α

.028

.036

.250

.100 TP

.016

.500

.016

.178

.170

.209

Dimensions

Millimeters

Min

4.52

4.32

5.31

Max

4.95

5.33

5.84

1.27

6.35

2.54 TP

0.41

12.70

0.41

0.53

19.05

0.48

1.02

0.18

0.71

0.91

45° TP

1.22

1.17

Notes

TO-72

Max

.195

.210

.230

.050

.021

.750

.019

.040

.007

.048

.046

2, 6

6

3, 6

8

NOTES:

1. Dimensions are in inches. Metric equivalents are given for general information only.

2. Measured in the zone beyond .250 (6.35 mm) from the seating plane.

3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane.

4. When measured in a gauging plane .054 +.001, -.000 (1.37 +.3, -.00 mm) before the seating plane of

the transistor, maximum diameter leads shall be within .007 (.18 mm) of their true location relative

to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter

lead tolerance.

5. The active elements are electrically insulated from the case.

6. All 4 leads.

7. Lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case.

8. Symbol TL is measured from HD maximum.

9. In accordance with ASME Y14.5M, diameters are equivalent to

φx

symbology.

* FIGURE 1. Physical dimensions (similar to T0-72).

3

MIL-PRF-19500/375F

UB

Dimensions

Symbol

BH

BL

BW

CL

CW

LL1

LL2

LS1

LS2

LW

r

r1

r2

Min

.046

.115

.085

Inches

Max

.056

.128

.108

.128

.108

.038

.035

.040

.079

.024

.008

.012

.022

Millimeters

Min

Max

0.97

1.42

2.82

3.25

2.41

2.74

3.25

2.74

0.56

0.96

0.43

0.89

0.91

1.02

1.81

2.01

0.41

0.61

.203

.305

.559

Note

.022

.017

.036

.071

.016

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Hatched areas on package denote metallized areas (tungsten with gold plating 60 micro inches min over 80

micro inches min nickel.

4. Lid material: Kovar; Lid finish: Gold plating 50 micro inches min thick over 80 micro inches nickel.

5. Pad 1 = Source, Pad 2 = Drain, Pad 3 = Gate, Pad 4 = Shielding connected to the lid.

* FIGURE 2. Physical dimensions, surface mount (2N3821UB, 2N3822UB, AND 2N3823UB).

4

MIL-PRF-19500/375F

3. REQUIREMENTS

*

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

R

ISO

................... Insulation resistance, gate lead to case.

V

1

...................... rms value of the specified reference voltage in the specified circuit.

V

2

...................... rms value of the measured voltage between the specified points in the specified circuit.

|y

os

| .................... Magnitude of small-signal common-source short-circuit output admittance.

S ........................ Unit of conductance or admittance (formerly mho).

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 and figure 2 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in paragraph 1.3, 1.4, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table 1.

* 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on

the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.

The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N"

prefix and the "UB" suffix can also be omitted.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4 VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

* 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

in 4.4.1 and 4.4.2 herein.

5

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	103790654
Reach Compliance Code	not_compliant
ECCN code	EAR99
FET technology	JUNCTION
JESD-609 code	e0
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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