Philips Semiconductors
Product specification
Low-voltage stabistors
FEATURES
•
Low-voltage stabilization
•
Forward voltage range: 1.4 to 3.2 V
•
Total power dissipation:
max. 330 mW
•
Differential resistance range:
max. 20 to 35
Ω.
APPLICATIONS
•
Power clipping
•
Level shifting
•
Low-voltage regulation
•
Temperature stabilization.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
PARAMETER
continuous reverse voltage
continuous forward current
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
−
−
−
−
−
CONDITIONS
The diodes are type branded.
BZV86 series
DESCRIPTION
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package. The series consists of four types: BZV86-1V4 to BZV86-3V2.
handbook, halfpage
k
a
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
MIN.
−
MAX.
10
200
150
125
100
330
+150
150
V
UNIT
mA
mA
mA
mA
mW
°C
°C
−65
−
1996 Mar 21
2
Philips Semiconductors
Product specification
Low-voltage stabistors
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
I
R
r
dif
reverse current
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
r
dif
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
r
dif
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
S
F
temperature coefficient
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
I
F
= 5 mA
−
−
−
−
−
I
F
= 10 mA; f = 1 kHz
−
−
−
−
6
8
9
10
I
F
= 5 mA; f = 1 kHz
−
−
−
−
10
15
18
20
V
R
= 5 V
I
F
= 1 mA; f = 1 kHz
−
−
−
−
55
80
90
100
CONDITIONS
I
F
= 5 mA; see Fig.2
1.30
1.85
2.35
2.85
−
−
−
−
−
−
MIN.
TYP.
BZV86 series
MAX.
1.50
2.15
2.80
3.45
200
−
−
−
−
20
30
32.5
35
10
15
17.5
20
−
−
−
−
25
V
V
V
V
UNIT
nA
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
mV/K
mV/K
mV/K
mV/K
pF
−3.8
−6.0
−8.5
−11.5
15
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
8 mm from the body
lead length 10 mm
VALUE
300
380
UNIT
K/W
K/W
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistors
PACKAGE OUTLINE
BZV86 series
andbook, full pagewidth
0.56
max
1.85
max
25.4 min
4.25
max
25.4 min
MLA428 - 1
Dimensions in mm.
The marking band indicates the cathode.
The diodes are type-branded.
Fig.3 SOD27 (DO-35).
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 21
5
Embedded System
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