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RM50TC-H

Description
3 PHASE, 100 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size49KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
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RM50TC-H Overview

3 PHASE, 100 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

RM50TC-H Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMitsubishi
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PUFM-X5
Maximum non-repetitive peak forward current1000 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current100 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
MITSUBISHI DIODE MODULES
RM50TC-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
RM50TC-M,-H,-24,-2H
I
O
V
RRM
DC output current ....................
100A
Repetitive peak reverse voltage
..........
400/800/1200/1600V
3 phase bridge
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers , DC motor controllers, Battery DC power supplies,
DC power supplies for control panels, and other general DC power equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
20
20
2–φ5.5
11.5 10.5
10
30
68
80
5–M5
LABEL
8
26.5
29.5
40
Feb.1999

RM50TC-H Related Products

RM50TC-H RM50TC-M RM50TC-2H RM50TC-24
Description 3 PHASE, 100 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 100 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE 3 PHASE, 100 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Mitsubishi Mitsubishi Mitsubishi Mitsubishi
Reach Compliance Code unknow unknow unknow unknow
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V
JESD-30 code R-PUFM-X5 R-PUFM-X5 R-PUFM-X5 R-PUFM-X5
Maximum non-repetitive peak forward current 1000 A 1000 A 1000 A 1000 A
Number of components 6 6 6 6
Phase 3 3 3 3
Number of terminals 5 5 5 5
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 100 A 100 A 100 A 100 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 400 V 1600 V 1200 V
surface mount NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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