RM50TC-2H datasheet, PDF - EEWORLD Datasheet

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RM50TC-2H: Description3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size49KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/; Environmental Compliance

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RM50TC-2H Overview

3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE

RM50TC-2H Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Mitsubishi
Reach Compliance Code	unknow
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-PUFM-X5
Maximum non-repetitive peak forward current	1000 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	100 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1600 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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MITSUBISHI DIODE MODULES

RM50TC-M,-H,-24,-2H

MEDIUM POWER GENERAL USE

INSULATED TYPE

RM50TC-M,-H,-24,-2H

•

RRM

DC output current ....................

100A

Repetitive peak reverse voltage

..........

400/800/1200/1600V

•

3 phase bridge

•

Insulated Type

•

UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

AC motor controllers , DC motor controllers, Battery DC power supplies,

DC power supplies for control panels, and other general DC power equipment

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

2–φ5.5

11.5 10.5

5–M5

LABEL

26.5

29.5

Feb.1999

RM50TC-2H Related Products

	RM50TC-2H	RM50TC-M	RM50TC-H	RM50TC-24
Description	3 PHASE, 100 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	3 PHASE, 100 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Reach Compliance Code	unknow	unknow	unknow	unknow
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V
JESD-30 code	R-PUFM-X5	R-PUFM-X5	R-PUFM-X5	R-PUFM-X5
Maximum non-repetitive peak forward current	1000 A	1000 A	1000 A	1000 A
Number of components	6	6	6	6
Phase	3	3	3	3
Number of terminals	5	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Maximum output current	100 A	100 A	100 A	100 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1600 V	400 V	800 V	1200 V
surface mount	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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