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BZX55-C4V7

Description
4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
Categorysemiconductor    Discrete semiconductor   
File Size301KB,6 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
Download Datasheet Parametric View All

BZX55-C4V7 Overview

4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH

BZX55-C4V7 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage4.7 V
Processing package descriptionGLASS, DO-35, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN SILVER
Terminal locationAXIAL
Packaging MaterialsGLASS
CraftsmanshipZENER
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit0.5000 W
polarityUNIDIRECTIONAL
Diode typeVOLTAGE REGULATOR DIODE
Working test current5 mA
Maximum total reference voltage5 %
BZX55-C0V8 THRU BZX55-C75
ZENER DIODES
FEATURES
DO-35
min. 1.083 (27.5)
Silicon Planar Power Zener Diodes
The Zener voltages are graded according to
the international E 24 standard. Standard Zener
voltage tolerance is ±5%. Replace suffix “C” with
“B” for ±2% tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
max. .150 (3.8)
max.
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
max.
.020 (0.52)
MECHANICAL DATA
Dimensions are in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
500
(1)
175
– 55 to +175
mW
°C
°C
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at I
F
= 100 mA
R
thJA
300
(1)
°C/W
V
F
1.0
Volts
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
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