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BZX55C3V9

Description
3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size15KB,2 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
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3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

BZX55C Series
MECHANICAL DATA
Dimensions in mm(inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.76 ± 0.15
(0.03 ± 0.006)
VOLTAGE REGULATOR
DIODE IN A
CERAMIC SURFACE MOUNT
PACKAGE
FOR HI–REL APPLICATIONS
A
1.40
(0.055)
max.
2.54 ± 0.13
(0.10 ± 0.005)
0.31 rad.
(0.012)
1.02 ± 0.10
(0.04 ± 0.004)
FEATURES
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• VOLTAGE RANGE 2.4 TO 75V
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
Pad 1 – Anode
Pad 2 – N/C
Pad 3 – Cathode
ABSOLUTE MAXIMUM RATINGS
P
TOT
Power Dissipation
Derate above 25°C
T
OP
T
STG
T
SOL
R
θJA
R
θJ–MB
Maximum Operating Ambient Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Mounting Base
(5 seconds max.)
T
MB
= 25°C
500mW
4mW/°C
–55 to +150°C
–65 to +175°C
260°C
336°C/W
140°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V
Z
I
R
Z
Z
Z
Z
Zener Voltage
Reverse Current
Small Signal Breakdown Impedance
Small Signal Breakdown Impedance
near breakdown knee
Test Conditions
For V
Z
nom.
36V,
For V
Z
nom.
39V,
V
R
= V
R
test
V
R
= V
R
test
I
Z
= I
Z
test
For V
Z
nom.
36V,
For V
Z
nom.
39V,
I
ZK
= 1mA
I
ZK
= 0.5mA
T
AMB
= 150°C
I
Z
= 5mA
I
Z
= 2.5mA
Min.
V
Z
min.
Typ.
Max.
Units
V
µA
V
Z
nom. V
Z
max.
I
R
max.
I
R
max
(2)
Z
Z
max.
Z
K
max.
See table 1 for type variants and test parameters.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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