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14KESD78TRE3

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
File Size158KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

14KESD78TRE3 Overview

Transient Suppressor,

14KESD78TRE3 Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
14KESD5.0 thru 14KESD170CA, e3
AXIAL-LEAD TVS
SCOTTSDALE DIVISION
DESCRIPTION
These small axial-leaded TVS devices feature the ability to clamp
dangerous high voltage, short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-41
(DO-204AL)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 40,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 14,000 Watts per MIL-
STD-750, Method 1020 (approximately 150 ns
exponential wave, or one microsecond transients up to
4000 watts. See Figure #1 and #2 for overall transient
Peak Pulse Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5V to 170V
Hermetic DO-41 Package. Also available in surface
mount DO-213AB MELF package (see separate data
sheet)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Minimal capacitance (See Figure #3)
Flexible axial-lead mounting terminals
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
4000 Watts for One Microsecond Square Wave or
14,000 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
Operating and storage temperature –65
o
C to 175
o
C
THERMAL RESISTANCE: Less than 83
o
C/Watt
junction to lead at 0.375 inches from body.
DC power dissipation 1500 mW at T
L
= 75
o
C at 3/8
inch (10 mm) lead length from body.
Derate at 22.8 W/
o
C above 25
o
C for P
PP
(1μs) and
at 15 mW/
o
C above 75
o
C for dc power.
Forward Surge Current 500 amps for 1μs at T
L
=
o
25 C (rise time > 100 ns).
MECHANICAL AND PACKAGING
CASE: Hermetically sealed axial-lead glass DO-41
(DO-204AL) package
FINISH: Tin-lead or RoHS compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.378 grams (typical)
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
14KESD5.0
14KESD170CA, e3
Copyright
©
2006
3-29-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

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