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10MQ100N-S

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size508KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

10MQ100N-S Overview

Rectifier Diode,

10MQ100N-S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current36 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current100 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
10MQ100N-S
Technical Data
Data Sheet N1371, Rev. B
10MQ100N-S SCHOTTKY RECTIFIER
Features
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SMA
Circuit Diagram
Applications
Disk Drives
Switching power supply
Redundant power subsystems
Converters
Free-Wheeling diodes
Reverse battery protection
Battery Charging
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
DC Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
F(DC)
I
FSM
Condition
-
50% duty cycle @T
L
=105°C,
rectangular wave form
DC@T
L
=120°C
8.3 ms, half Sine pulse
Max.
100
1.5
2.1
36
Units
V
A
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
V
F1
V
F2
Reverse Current*
I
R1
I
R2
Junction Capacitance
Typical Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
C
T
L
S
dv/dt
Voltage Rate of Change
Condition
@ 1 A, Pulse, T
J
= 25 °C
@ 1.5 A, Pulse, T
J
= 25 °C
@ 1 A, Pulse, T
J
= 125 °C
@ 1.5A, Pulse, T
J
= 125 °C
@V
R
= rated V
R
, Pulse,
T
J
= 25 °C
@V
R
= rated V
R
, Pulse,
T
J
= 125 °C
@V
R
= 5V, T
C
= 25 °C
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.76
0.79
0.61
0.65
0.1
0.05
36
2.0
-
Max.
0.78
0.85
0.63
0.68
100
1
38
-
10,000
Units
V
V
uA
mA
PF
nH
V/s
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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