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TC1N4148MTB

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size425KB,4 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Download Datasheet Parametric View All

TC1N4148MTB Overview

Rectifier Diode,

TC1N4148MTB Parametric

Parameter NameAttribute value
MakerTak Cheong
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
®
TAK CHEONG
SE M ICOND UC TOR
300 mW DO-34 Hermetically
Sealed Glass Fast Switching
Diodes
AXIAL LEAD
DO34
Absolute Maximum Ratings
Symbol
P
D
T
STG
T
J
W
IV
I
O
I
FM
I
FSURGE
Power Dissipation
T
A
= 25°C unless otherwise noted
Value
300
-65 to +150
+150
75
150
450
2
Units
mW
°C
°C
V
mA
mA
A
DEVICE MARKING DIAGRAM
(TC1N4148M)
Parameter
Storage Temperature Range
Operating Junction Temperature
Working Inverse Voltage
Average Rectified Current
Non-repetitive Peak Forward Current
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
L
: Logo
DEVICE MARKING DIAGRAM
(TC1N4448M / TC1N914BM)
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
L
: Logo
Device Code : TC1NxxxxM
Fast Switching Device (T
RR
<4.0 nS)
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Test Condition
I
R
=100µA
I
R
=5µA
I
R
Reverse Leakage Current
V
R
=20V
V
R
=75V
V
F
Forward Voltage
TC1N4448M, TC1N914BM
TC1N4148M,
TC1N4148M
TC1N4448M, TC1N914BM
T
RR
Reverse Recovery Time
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=10mA, V
R
=6V
R
L
=100
I
RR
=1mA
C
Capacitance
V
R
=0V, f=1M
HZ
4
pF
4
nS
0.62
Limits
Min
B
V
100
75
25
5
0.72
1.0
1.0
Volts
Volts
nA
µA
Max
Unit
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Symbol
Number: DB-050
Jan 2010 / F
Page 1
L xxxx
TC1N4148M/TC1N4448M/TC1N914BM
L
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