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MBR120200CTR

Description
200V 120A Silicon Schottky Rectifier in Twin Tower Package
CategoryDiscrete semiconductor    diode   
File Size506KB,3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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MBR120200CTR Overview

200V 120A Silicon Schottky Rectifier in Twin Tower Package

MBR120200CTR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionR-PUFM-X2
Reach Compliance Codecompliant
Is SamacsysN
applicationPOWER
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.92 V
JESD-30 codeR-PUFM-X2
Maximum non-repetitive peak forward current800 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current60 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
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