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1N830

Description
Diode,
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerAeroflex
Websitehttp://www.aeroflex.com/
Environmental Compliance
Download Datasheet Parametric View All

1N830 Overview

Diode,

1N830 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAeroflex
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
surface mountNO
Base Number Matches1
Point Contact
Diodes
Point Contact Diodes:
1N Series
Ka Band Point Contact Detector Diodes
Description
This
MicroMetrics
1N series of Point
Contact Detector diodes is designed
for applications through Ka-Band.
These diodes employ epitaxial silicon
optimized for high tangential signal
sensitivity (TSS), and are suitable for
use in waveguide, coaxial and stripline
applications. Being point contact
diodes, they are efficient detectors not
requiring the use of bias. Devices in
this series are available in glass or
cartridge packaging.
Applications
This 1N series of Point Contact
Detectors is suitable for use in wave-
guide, coaxial and stripline applications
Features
• Broadband Operations
• Bias Not Required
Packaging
• Glass or Cartridge
Typical Performance
10000.0
5000.0
2000.0
1000.0
500.0
200.0
VOLTAGE OUTPUT
(mV)
VOLTAGE OUTPUT
(mV)
100.0
50.0
20.0
10.0
5
µ
a
10000.0
RL = 1MΩ
5000.0
2000.0
1000.0
R = 1KΩ
L
500.0
200.0
100.0
50.0
RL = 10Ω
20.0
10.0
5.0
2.0
1.0
0.50
50
µ
RL = 1MΩ
RL = 100KΩ
RL = 10KΩ
R = 1KΩ
L
R = 100Ω
L
RL = 10KΩ
50µa
5.0
2.0
1.0
0.50
5
µ
a
RL = 1Ω
Test Conditions: F = 9.375 GHz
5
µ
a
0.20
0.10
0.20
0.10
0
5
10 15 20
-30 -25 -20 -15 -10 -5
Test Conditions:
F = 9.375 GHz
DC Bias = 0
0
5
10 15 20
-30 -25 -20 -15 -10 -5
a
POWER INPUT
(dBm)
POWER INPUT
(dBm)
74
MicroMetrics, Inc.
136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com

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