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LM5111-1M/NOPB

Description
5-A/3-A dual channel gate driver with active high or low output 4-V UVLO 8-SOIC -40 to 125
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size1MB,28 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

LM5111-1M/NOPB Overview

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO 8-SOIC -40 to 125

LM5111-1M/NOPB Parametric

Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTT Electronics plc
Parts packaging codeSOIC
package instructionSOIC-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Built-in protectionOVER VOLTAGE
Interface integrated circuit typeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
Humidity sensitivity level1
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Output current flow directionSOURCE AND SINK
Maximum output current5 A
Nominal output peak current5 A
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage14 V
Minimum supply voltage3.5 V
Nominal supply voltage12 V
surface mountYES
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width3.9 mm
Base Number Matches1
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Reference
Design
LM5111
SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016
LM5111 Dual 5-A Compound Gate Driver
1 Features
1
3 Description
The LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each
compound
output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5-A peak from
capacitive
loads.
Combining
the
unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Undervoltage lockout protection is also provided. The
drivers can be operated in parallel with inputs and
outputs connected to double the drive current
capability. This device is available in the SOIC
package or the thermally enhanced MSOP-
PowerPAD package.
Device Information
(1)
PART NUMBER
LM5111
PACKAGE
SOIC (8)
BODY SIZE (NOM)
5.00 mm x 6.00 mm
Independently Drives Two N-Channel MOSFETs
Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
5-A Sink and 3-A Source Current Capability
Two Channels can be Connected in Parallel to
Double the Drive Current
Independent Inputs (TTL Compatible)
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns and 12 ns Rise
and Fall, Respectively, With 2-nF Load)
Available in Dual Noninverting, Dual Inverting and
Combination Configurations
Supply Rail Undervoltage Lockout Protection
(UVLO)ƒ
LM5111-4 UVLO Configured to Drive PFET
through OUT_A and NFET through OUT_B
Pin Compatible With Industry Standard Gate
Drivers
MSOP-PowerPAD (8) 3.00 mm x 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
Simplified Application Diagram
LM5111
1
N/C
N/C
8
INA
2
INA
OUTA
7
3
VEE
VCC
6
INB
4
INB
OUTB
5
0.1 µF
1.0 µF
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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