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1N4444

Description
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size141KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N4444 Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,

1N4444 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-XALF-W2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum reverse current0.05 µA
Maximum reverse recovery time0.007 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Index Files: 1120  1729  1238  1491  235  23  35  25  31  5 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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