ATF-501P8-TR1 datasheet, PDF - EEWORLD Datasheet

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ATF-501P8-TR1: DescriptionAgilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package; CategoryDiscrete semiconductor The transistor; File Size187KB，22 Pages; ManufacturerHP（Keysight）; Websitehttp://www.semiconductor.agilent.com/; Environmental Compliance

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ATF-501P8-TR1 Overview

Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

ATF-501P8-TR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	HP（Keysight）
Parts packaging code	SON
package instruction	SMALL OUTLINE, S-PDSO-N8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	7 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	1 A
FET technology	HIGH ELECTRON MOBILITY
highest frequency band	S BAND
JEDEC-95 code	MO-229
JESD-30 code	S-PDSO-N8
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	3.5 W
Minimum power gain (Gp)	13.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Agilent ATF-501P8 High Linearity

Enhancement Mode

[1]

Pseudomorphic HEMT in

2x2 mm

LPCC

[3]

Package

Data Sheet

Features

• Single voltage operation

• High Linearity and P1dB

• Low Noise Figure

Description

Agilent Technologies’s ATF-

501P8 is a single-voltage high

linearity, low noise E-pHEMT

housed in an 8-lead JEDEC-

standard leadless plastic chip

carrier (LPCC

[3]

) package. The

device is ideal as a medium-

power amplifier. Its operating

frequency range is from 400 MHz

to 3.9 GHz.

The thermally efficient package

measures only 2mm x 2mm x

0.75mm. Its backside

metalization provides excellent

thermal dissipation as well as

visual evidence of solder reflow.

The device has a Point MTTF of

over 300 years at a mounting

temperature of +85ºC. All devices

are 100% RF & DC tested.

Notes:

1. Enhancement mode technology employs a

single positive V

, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

2. Refer to reliability datasheet for detailed

MTTF data.

3. Conforms to JEDEC reference outline MO229

for DRP-N.

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

Pin Connections and

Package Marking

Source

(Thermal/RF Gnd)

Pin 8

Pin 7 (Drain)

Pin 6

Pin 5

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

• Excellent uniformity in product

specifications

• Small package size: 2.0 x 2.0 x

0.75 mm

• Point MTTF > 300 years

[2]

• MSL-1 and lead-free

• Tape-and-Reel packaging option

available

Specifications

• 2 GHz; 4.5V, 280 mA (Typ.)

Bottom View

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

Pin 8

0Px

Top View

Pin 7 (Drain)

Pin 6

Pin 5

• 45.5 dBm Output IP3

• 29 dBm Output Power at 1dB gain

compression

• 1 dB Noise Figure

• 15 dB Gain

• 14.5 dB LFOM

[4]

• 65% PAE

• 23

C/W thermal resistance

Applications

• Front-end LNA Q2 and Q3, Driver or

Pre-driver Amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

• Driver Amplifier for WLAN, WLL/

RLL and MMDS applications

• General purpose discrete E-pHEMT

for other high linearity applications

Note:

Package marking provides orientation and

identification:

“0P” = Device Code

“x” = Date code indicates the month of

manufacture.

Attention:

Observe precautions for

handling electrostatic

sensitive devices.

ESD Machine Model (Class A)

ESD Human Body Model (Class 1B)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

ATF-501P8-TR1 Related Products

	ATF-501P8-TR1	ATF-501P8-BLK	ATF-501P8-TR2	ATF501P8
Description	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package	DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12/-12, Max Output Current(A): ??0.625, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40??C to +75??C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Metal Package, Continuous Auto-Recovery, Single & Dual Ouput Regulated	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package	DC-DC Converter, 15Watt, Input VDC: 18~75, Output VDC: 12/-12, Max Output Current(A): ??0.625, Package: 2x1, Isolation(VDC): 1500, Operating Temp. -40??C to +75??C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Metal Package, Continuous Auto-Recovery, Single & Dual Ouput Regulated
Is it Rohs certified?	conform to	conform to	conform to	-
Maker	HP（Keysight）	HP（Keysight）	HP（Keysight）	-
Parts packaging code	SON	SON	SON	-
package instruction	SMALL OUTLINE, S-PDSO-N8	SMALL OUTLINE, S-PDSO-N8	SMALL OUTLINE, S-PDSO-N8	-
Contacts	8	8	8	-
Reach Compliance Code	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	EAR99	-
Other features	LOW NOISE	LOW NOISE	LOW NOISE	-
Shell connection	SOURCE	SOURCE	SOURCE	-
Configuration	SINGLE	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	7 V	7 V	7 V	-
Maximum drain current (Abs) (ID)	1 A	1 A	1 A	-
Maximum drain current (ID)	1 A	1 A	1 A	-
FET technology	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	-
highest frequency band	S BAND	S BAND	S BAND	-
JEDEC-95 code	MO-229	MO-229	MO-229	-
JESD-30 code	S-PDSO-N8	S-PDSO-N8	S-PDSO-N8	-
Humidity sensitivity level	1	1	1	-
Number of components	1	1	1	-
Number of terminals	8	8	8	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	SQUARE	SQUARE	SQUARE	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power consumption environment	3.5 W	3.5 W	3.5 W	-
Minimum power gain (Gp)	13.5 dB	13.5 dB	13.5 dB	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	-
Terminal form	NO LEAD	NO LEAD	NO LEAD	-
Terminal location	DUAL	DUAL	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-
Transistor component materials	SILICON	SILICON	SILICON	-

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