Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | FLANGE MOUNT, R-XUFM-X23 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 14 weeks |
| Is Samacsys | N |
| Other features | UL RECOGNIZED |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 28 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | COMPLEX |
| JESD-30 code | R-XUFM-X23 |
| Number of components | 7 |
| Number of terminals | 23 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 495 ns |
| Nominal on time (ton) | 120 ns |
| Base Number Matches | 1 |
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