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2SC1654

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size275KB,4 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

2SC1654 Overview

Transistor,

2SC1654 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
High DC current gain:h
FE
=130(Typ)
(V
CE
=3V,I
C
=15mA)
High voltage.
Production specification
2SC1654
Pb
Lead-free
APPLICATIONS
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
2SC1654
Marking
N5/N6/N7
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
180
160
5
50
150
-55~150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC096
Rev.A
www.galaxycn.com
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