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8403611LA

Description
CDIP-24, Tube
Categorystorage    storage   
File Size192KB,13 Pages
ManufacturerIDT (Integrated Device Technology)
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8403611LA Overview

CDIP-24, Tube

8403611LA Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeCDIP
package instructionDIP, DIP24,.3
Contacts24
Manufacturer packaging codeSD24
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T24
JESD-609 codee0
length32.004 mm
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusQualified
Filter levelMIL-STD-883
Maximum seat height5.08 mm
Maximum standby current0.02 A
Minimum standby current4.5 V
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature20
width7.62 mm
Base Number Matches1
CMOS Static RAM
16K (2K x 8-Bit)
Features
Description
6116SA
6116LA
High-speed access and chip select times
– Commercial: 15/20/25ns (max.)
– Industrial: 20/25ns (max.)
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
Military product compliant to MIL-STD-833, Class B
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS
goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as
CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
A
10
128 X 128
MEMORY
ARRAY
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
1
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