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BCW60BR

Description
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

BCW60BR Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN

BCW60BR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
Base Number Matches1
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 – AUGUST 1995
PARTMARKING DETAILS
BCW60A – AA
BCW60B – AB
BCW60C – AC
BCW60D – AD
COMPLEMENTARY TYPE
BCW61
BCW60AR –
BCW60BR –
BCW60CR –
BCW60DR –
CR
DR
AR
BR
BCW60
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
TOT
tj:tstg
VALUE
32
32
5
200
50
330
-55 to +150
SOT23
UNIT
V
V
V
mA
mA
mW
°C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
h
FE
Group B
Min.
2.5
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
Group C
Min.
3.2
Typ.
4.5
2
330
30
60
Max.
8.5
h
FE
Group D
Min.
4.5
Typ.
7.5
3
520
50
100
µ
S
Max.
12
k
10
-4
SWITCHING CIRCUIT
-V
BB
V
CC
(+10V)
R
2
R
L
1
µ
sec
+10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
50
R
1
t
r
< 5nsec
Z
in
100k
Oscilloscope
PAGE NO
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