SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS
BCW67A DA
BCW67B DB
BCW67C DC
BCW68F DF
BCW68G DG
BCW68H DH
COMPLEMENTARY TYPES
BCW67 BCW65
BCW68 BCW66
BCW67AR
BCW67BR
BCW67CR
BCW68FR
BCW68GR
BCW68HR
4W
5W
6W
7T
5T
7N
Not Recommended for New Design
Please Use BCW68H
BCW67
BCW68
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CES
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
BCW67
-45
-32
-5
-1000
-800
-100
330
-55 to +150
BCW68
-60
-45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 29
BCW67
BCW68
Not Recommended for New Design
Please Use BCW68H
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
BCW67
BCW68
Emitter-Base Breakdown Voltage
Collector-Emitter
Cut-off Current
BCW67
BCW68
Emitter-Base Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
BCW67A
BCW68F
BCW67B
BCW68G
BCW67C
BCW68H
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
75
100
35
120
160
60
180
250
100
100
12
18
80
2
10
170
-0.7
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
-32
-45
-45
-60
-5
-20
-10
-20
-10
-20
-0.3
-2
250
V
µ
A
µ
A
V
I
CEO
=-10mA
I
CEO
=-10mA
I
C
=-10
µ
A
I
C
=-10
µ
A
I
EBO
=-10
µ
A
V
CES
=-32V
=150
°
C
V
CES
=-32V ,T
amb
V
CES
=-45V
=150°C
V
CES
=-45V , T
amb
V
EBO
=-4V
I
C
=-100mA, I
B
= -10mA
I
C
= -500mA, I
B
=-50mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
nA
nA
nA
V
V
V
h
FE
250
400
h
FE
350
630
MHz
pF
pF
dB
f
T
C
cbo
C
ebo
N
I
C
=-20mA, V
CE
=-10V
f = 100MHz
V
CBO
=-10V, f =1MHz
V
EBO
=-0.5V, f =1MHz
I
C
= -0.2mA, V
CE
=- 5V
R
G
=1K
Ω,
f=1KH
∆
f=200Hz
I
C
=-150mA
I
B1
=- I
B2
=-15mA
R
L
=150
Ω
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 30
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