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1N5537A-1

Description
Zener Diode, 17V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, HERMETICALLY SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size106KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N5537A-1 Overview

Zener Diode, 17V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-35, HERMETICALLY SEALED, GLASS PACKAGE-2

1N5537A-1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICAL BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance100 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage17 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance10%
Working test current1 mA
Base Number Matches1
• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
• LOW REVERSE LEAKAGE CHARACTERISTICS
• LOW NOISE CHARACTERISTICS
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
1ZM
1N5518 thru 1N5546D
and
1N5518B-1 thru 1N5546B-1
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ@ 1ZT
(NOTE 2)
VOLTS
ZENER
TEST
CURRENT
1ZT
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ 1ZT
(NOTE 3)
OHMS
MAXIMUM REVERSE
LEAKAGE CURRENT
lR
(NOTE 4)
VR = VOLTS
NON & A-
SUFFIX
B-C-D-
SUFFIX
B-C-D SUFFIX
MAX. NOISE
DENSITY
@1Z=250
µ
A
ND
REGULATION
FACTOR
³VZ
(NOTE 5)
VOLTS
LOW
VZ
CURRENT
1ZL
mAdc
µ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
mAdc
µ
V/
HZ
mAdc
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units
with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix
for +1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of 1ZT.
NOTE 2
NOTE 3
NOTE 4
NOTE 5
Reverse leakage currents are measured at VR as shown on the table.
³VZ is the maximum difference between VZ at lZT and VZ at lZL measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
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