Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
FEATURES
•
Low current
•
Very high power gain
•
Low noise figure
•
Integrated temperature compensated biasing
•
Control pin for adjustment bias current
•
Supply and RF output pin combined.
APPLICATIONS
•
RF front end
•
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
•
Low noise amplifiers
•
Satellite television tuners (SATV)
•
High frequency oscillators.
DESCRIPTION
Silicon MMIC amplifier consisting of an NPN double
polysilicon transistor with integrated biasing for low voltage
applications in a plastic, 4-pin SOT343R package.
Marking code:
A6
handbook, halfpage
BGU2003
PINNING
PIN
1
2
3
4
GND
RF in
CTRL (bias current control)
V
S
+ RF out
DESCRIPTION
3
4
CTRL
VS+RFout
BIAS
CIRCUIT
2
Top view
1
MAM427
RFin
GND
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
MSG
NF
PARAMETER
DC supply voltage
DC supply current
maximum stable gain
noise figure
CONDITIONS
RF input AC coupled
V
VS-OUT
= 2.5 V; I
CTRL
= 1 mA;
RF input AC coupled
V
VS-OUT
= 2.5 V; f = 1 800 MHz;
T
amb
= 25
°C
V
VS-OUT
= 2.5 V; f = 1 800 MHz;
Γ
S
=
Γ
opt
−
10
18
1.1
TYP.
−
−
−
MAX.
4.5
V
mA
dB
dB
UNIT
2002 May 17
2
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
S
V
CTRL
I
S
I
CTRL
P
tot
T
stg
T
j
PARAMETER
supply voltage
voltage on control pin
supply current (DC)
control current
total power dissipation
storage temperature
operating junction temperature
T
s
≤
100
°C
forced by DC voltage on RF input
or I
CTRL
CONDITIONS
RF input AC coupled
−
−
−
−
−
−65
−
MIN.
2
30
3
135
BGU2003
MAX.
4.5
V
V
UNIT
mA
mA
mW
°C
°C
+150
150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; T
j
= 25
°C;
unless otherwise specified.
SYMBOL
I
S
MSG
PARAMETER
supply current
maximum stable gain
CONDITIONS
V
VS-OUT
= 2.5 V; I
CTRL
= 0.4 mA
V
VS-OUT
= 2.5 V; I
CTRL
= 1.0 mA
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
|s
21
|
2
insertion power gain
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
s
12
isolation
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 900 MHz
V
VS-OUT
= 2.5 V; I
VS-OUT
= 0;
f = 1800 MHz
NF
noise figure
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 900 MHz;
Γ
S
=
Γ
opt
V
VS-OUT
= 2.5 V; I
VS-OUT
= 10 mA;
f = 1800 MHz;
Γ
S
=
Γ
opt
IP3
(out)
output intercept point;
Z
S
= Z
L
50
Ω
V
VS-OUT
= 2.3 V; I
VS-OUT
= 10 mA;
f = 900 MHz
V
VS-OUT
= 2.3 V; I
VS-OUT
= 10 mA;
f = 1800 MHz
MIN.
2.5
6
−
−
18
13
−
−
−
−
−
−
TYP.
4.5
10
23
18
19
14
26
20
1.0
1.1
19
21
MAX.
6.5
15
−
−
−
−
−
−
2
2
−
−
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
2002 May 17
3
Philips Semiconductors
Preliminary specification
SiGe MMIC amplifier
BGU2003
MGS537
handbook, halfpage
200
handbook, halfpage
100 pF
R1
VS
L1
C
Ptot
(mW)
150
RCTRL
VCTRL
3
BGA2003
4
RF out
100
50
2
C
0
RF in
0
MGS536
1
50
100
150
Ts (
°
C)
200
Fig.2 Typical application circuit.
Fig.3 Power derating.
MGS538
handbook, halfpage
2.5
I CTRL
(mA)
handbook, halfpage
30
MGS539
I VS-OUT
2
(mA)
20
1.5
1
10
0.5
0
0
0.5
1
1.5
2
VCTRL (V)
0
0
0.5
1
1.5
2
I CTRL (mA)
2.5
V
S-OUT
= 2.5 V.
Fig.4
Control current as a function of the control
voltage on pin 3; typical values.
Fig.5
Bias current as a function of the control
current; typical values.
2002 May 17
4
RF/Wirelessly
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