DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BSN254; BSN254A
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 23
2002 Feb 19
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
•
Direct interface to C-MOS, TTL, etc.
•
High-speed switching
•
No secondary breakdown
•
Low R
DSon
.
APPLICATIONS
•
Line current interruptor in telephone sets
•
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
handbook, halfpage
BSN254; BSN254A
PINNING - SOT54 variant
DESCRIPTION
PIN
BSN254
1
2
3
gate
drain
source
gate
drain
BSN254A
source
d
1
2
3
g
MAM146
s
note: various pinnings are available on request
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DSon
V
GSth
PARAMETER
drain-source voltage (DC)
drain current (DC)
total power dissipation
gate-source threshold voltage
T
amb
≤
25
°C
I
D
= 1 mA; V
DS
= V
GS
drain-source on-state resistance I
D
= 300 mA; V
GS
= 10 V
CONDITIONS
−
−
−
2.8
−
TYP.
MAX.
250
310
1
5
2
V
mA
W
Ω
V
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
×
10 mm.
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C;
note 1
open drain
CONDITIONS
−
−
−
−
−
−55
−
MIN.
MAX.
250
±20
310
1.25
1
+150
150
V
V
mA
A
W
°C
°C
UNIT
2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient; note 1
BSN254; BSN254A
VALUE
125
UNIT
K/W
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
10
×
10 mm.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
GSS
V
GSth
R
DSon
I
DSS
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
PARAMETER
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 10
µA;
V
GS
= 0
V
GS
=
±20
V; V
DS
= 0
I
D
= 1 mA; V
DS
= V
GS
I
D
= 20 mA; V
GS
= 2.4 V
I
D
= 300 mA; V
GS
= 10 V
V
DS
= 200 V; V
GS
= 0
I
D
= 300 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
MIN.
250
−
0.8
−
−
−
200
−
−
−
−
−
TYP. MAX. UNIT
−
−
−
−
2.8
−
600
100
21
10
−
±100
2
7.5
5
1
−
120
30
15
V
nA
V
Ω
Ω
µA
mS
pF
pF
pF
Switching times
(see Figs 2 and 3)
turn-on time
turn-off time
6
47
10
60
ns
ns
2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
handbook, halfpage
VDD = 50 V
90 %
INPUT
10 %
90 %
10 V
0V
ID
50
Ω
MBB691
OUTPUT
10 %
ton
toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
1.2
MRC238
handbook, halfpage
1.2
MGU569
Ptot
(W)
0.8
ID
(A)
(1)
(2)
(3)
(4)
0.8
(5)
0.4
0.4
(6)
(7)
0
0
50
100
150
200
Tamb (°C)
0
0
2
4
6
8
10
VDS (V)
T
j
= 25
°C.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4 V.
(4) V
GS
= 3.5 V.
(5) V
GS
= 3 V.
(6) V
GS
= 2.5 V.
(7) V
GS
= 2 V.
Fig.4 Power derating curve.
Fig.5
Typical output characteristics.
2002 Feb 19
4
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN254; BSN254A
handbook, halfpage
ID
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
MGU570
handbook, halfpage
20
MGU571
(1)
(A)
RDSon
(Ω)
(2)
15
10
(3)
5
(4)
(5)
(6)
0
2
4
6
8
10
VGS (V)
0
10
−1
T
j
= 25
°C.
(1) V
GS
= 2.5 V.
(2) V
GS
= 3 V.
1
ID (A)
10
(3) V
GS
= 3.5 V.
(4) V
GS
= 4 V.
(5) V
GS
= 5 V.
(6) V
GS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.7
Fig.6 Typical transfer characteristics.
Drain-source on-state resistance as a
function of drain current; typical values.
handbook, halfpage
250
MGU572
C
(pF)
200
150
100
Ciss
50
Coss
Crss
0
10
20
VDS (V)
30
0
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.8
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
2002 Feb 19
5
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