DISCRETE SEMICONDUCTORS
DATA SHEET
BSN254
BSN254A
N-channel enhancement mode
vertical D-MOS transistors
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistors in TO-92
variant envelope and designed for
use as line current interrupters in
telephone sets and for application in
relay, high-speed and
line-transformer drivers.
FEATURES
•
Direct interface to C-MOS, TTL,
etc.
•
High-speed switching
•
No second breakdown
•
Low R
DS (on)
PINNING (BSN254)
1 = gate
2 = drain
3 = source
PINNING (BSN254A)
1 = source
2 = gate
3 = drain
PIN CONFIGURATION - TO-92 VARIANT
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC)
Total power dissipation up to T
amb
= 25
°C
Drain-source on-resistance
I
D
= 300 mA; V
GS
= 10 V
Gate-source threshold voltage
R
DS(on)
V
GS(th)
V
DS
I
D
P
tot
BSN254
BSN254A
max.
max.
max.
typ.
max.
max.
250 V
300 mA
1 W
5.0
Ω
7.0
Ω
2 V
handbook, halfpage
d
1
2
3
g
MAM146
s
Note: Various pinnings are available on request.
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
amb
= 25
°C
(note 1)
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient (note 1)
Note
R
th j-a
=
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
max.
BSN254
BSN254A
250 V
20 V
300 mA
1.2 A
1 W
150
°C
−65
to
+
150
°C
125 K/W
1. Device mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm
×
10 mm.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Drain-source breakdown voltage
I
D
= 10
µA;
V
GS
= 0
Drain-source leakage current
V
DS
= 200 V; V
GS
= 0
Gate-source leakage current
±
V
GS
= 20 V; V
DS
= 0
Gate threshold voltage
I
D
= 1 mA; V
DS
= V
GS
Drain-source on-resistance
I
D
= 300 mA; V
GS
= 10 V
I
D
= 20 mA; V
GS
= 2.4 V
Transfer admittance
I
D
= 300 mA; V
DS
= 25 V
Input capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
C
iss
typ.
max.
65 pF
90 pF
Y
fs
min.
typ.
200 mS
400 mS
R
DS (on)
R
DS(on)
typ.
max.
max.
V
GS(th)
min.
max.
0.8 V
2.0 V
5.0
Ω
7.0
Ω
10
Ω
±
I
GSS
max.
100 nA
I
DSS
max.
1
µA
V
(BR) DSS
min.
250 V
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
Output capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
Feedback capacitance at f = 1 MHz
V
DS
= 25 V; V
GS
= 0
Switching times (see Figs 2 and 3)
I
D
= 250 mA; V
DD
= 50 V; V
GS
= 0 to 10 V
t
on
typ.
max.
typ.
max.
C
rss
typ.
max.
C
oss
typ.
max.
BSN254
BSN254A
20 pF
30 pF
5 pF
15 pF
5 ns
10 ns
20 ns
30 ns
t
off
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT
10 %
10 V
0V
ID
50
Ω
MSA631
90 %
OUTPUT
10 %
ton
toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
1.2
MRC238
handbook, halfpage
2
MDA712
Ptot
(W)
0.8
ID
(A)
1.6
VGS = 10 V
6V
5V
1.2
4V
0.8
0.4
0.4
3V
0
0
50
100
150
200
Tamb (°C)
2V
0
0
2
4
6
8
10
VDS (V)
Fig.4 Power derating curve.
Fig.5
Output characteristics; T
j
= 25
°C;
typical
values.
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN254
BSN254A
handbook, halfpage
2
MDA713
ID
handbook, halfpage
10
4
MDA714
(A)
1.6
ID
(mA)
10
3
VGS = 10 V
5V
4V
3V
1.2
0.8
10
2
0.4
0
0
2
4
6
8
10
VGS (V)
10
0
4
8
12
16
RDSon (Ω)
Fig.6
Transfer characteristic; V
DS
= 10 V;
T
j
= 25
°C;
typical value.
Fig.7
On-resistance as a function of drain current;
T
j
= 25
°C;
typical values.
200
handbook, halfpage
C
(pF)
160
MDA715
handbook, halfpage
1.4
k
1.2
MDA716
120
1
80
Ciss
0.8
40
Coss
Crss
0
0
5
10
15
20
25
VDS (V)
0.6
−50
0
50
100
Tj (°C)
150
Fig.9
Fig.8
Capacitances as a function of drain-source
voltage; V
GS
= 0; f = 1 MHz; T
j
= 25
°C;
typical values.
V
GS(th)
at T
j
-
k
= ---------------------------------------
;
V
GS(th)
at 25
°C
V
GS(th)
at 1 mA; typical values
April 1995
5
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