DS1225AB/AD
64k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
§
§
§
§
§
§
§
§
§
§
§
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
CC
operating range (DS1225AD)
Optional ±5% V
CC
operating range
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A12
DQ0-DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
1 of 10
103002
DS1225AB/AD
READ MODE
The DS1225AB and DS1225AD execute a read cycle whenever WE (Write Enable) is inactive (high) and
CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 13
address inputs (A
0
-A
12
) defines which of the 8192 bytes of data is to be accessed. Valid data will be
available to the eight data output drivers within t
ACC
(Access Time) after the last address input signal is
stable, providing that CE and OE access times are also satisfied. If CE and OE access times are not
satisfied, then data access must be measured from the later-occurring signal and the limiting parameter is
either t
CO
for CE or t
OE
for OE rather than address access.
WRITE MODE
The DS1225AB and DS1225AD execute a write cycle whenever the WE and CE signals are active
(low) after address inputs are stable. The later-occurring falling edge of CE or WE will determine the
start of the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address
inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum
recovery time (t
WR
) before another cycle can be initiated. The OE control signal should be kept inactive
(high) during write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and
OE active) then WE will disable the outputs in t
ODW
from its falling edge.
DATA RETENTION MODE
The DS1225AB provides full functional capability for V
CC
greater than 4.75 volts and write protects by
4.5 volts. The DS1225AD provides full-functional capability for V
CC
greater than 4.5 volts and write
protects by 4.25 volts. Data is maintained in the absence of V
CC
without any additional support circuitry.
The nonvolatile static RAMs constantly monitor V
CC
. Should the supply voltage decay, the NV SRAMs
automatically write protect themselves, all inputs become “don’t care,” and all outputs become high-
impedance. As V
CC
falls below approximately 3.0 volts, the power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when V
CC
rises above approximately 3.0 volts,
the power switching circuit connects external V
CC
to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V
CC
exceeds 4.75 volts for the DS1225AB and 4.5 volts for the
DS1225AD.
FRESHNESS SEAL
Each DS1225 is shipped from Dallas Semiconductor with the lithium energy source disconnected,
guaranteeing full energy capacity. When V
CC
is first applied at a level of greater than V
TP
, the lithium
energy source is enabled for battery backup operation.
2 of 10
DS1225AB/AD
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
*
-0.3V to +7.0V
0°C to 70°C; -40°C to +85°C for IND parts
-40°C to +70°C; -40°C to +85°C for IND parts
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
PARAMETER
DS1225AB Power Supply Voltage
DS1225AD Power Supply Voltage
Logic 1
Logic 0
SYMBOL
V
CC
V
CC
V
IH
V
IL
MIN
4.75
4.50
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
+0.8
RECOMMENDED DC OPERATING CONDITIONS
(T
A
: See Note 10)
UNITS
V
V
V
V
NOTES
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current
CE > V
IH
< V
CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE =2.2V
Standby Current CE =V
CC
-0.5V
Operating Current
(Commercial)
Operating Current
(Industrial)
Write Protection Voltage
(DS1225AB)
Write Protection Voltage
(DS1225AD)
SYMBOL
I
IL
MIN
-1.0
(T
A
: See Note 10)
(V
CC
=5V ± 5% for DS1225AB)
(V
CC
=5V ± 10% for DS1225AD)
TYP
MAX
+1.0
UNITS
m
A
m
A
NOTES
I
IO
I
OH
I
OL
I
CCS1
I
CCS2
I
CC01
I
CC01
V
TP
V
TP
-1.0
-1.0
2.0
5.0
3.0
+1.0
10.0
5.0
75
85
mA
mA
mA
mA
mA
mA
V
V
4.50
4.25
4.62
4.37
4.75
4.5
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN
TYP
5
5
MAX
10
10
(T
A
=25°C)
UNITS
pF
pF
NOTES
3 of 10
DS1225AB/AD
AC ELECTRICAL CHARACTERISTICS
PARAMETER
(T
A
: See Note 10)
(V
CC
=5V ± 5% for DS1225AB)
(V
CC
=5V ± 10% for DS1225AD)
DS1225AB-85
DS1225AD-85
MIN MAX
85
85
45
85
UNITS
NOTES
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
DS1225AB-70
SYMBOL DS1225AD-70
MIN MAX
t
RC
70
t
ACC
70
35
t
OE
70
t
CO
5
t
COE
t
OD
25
5
t
OH
5
30
5
85
65
0
0
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
70
55
0
0
10
25
5
30
0
10
3
12
13
5
5
4
12
13
30
5
35
0
10
4 of 10
DS1225AB/AD
AC ELECTRICAL CHARACTERISTICS
(cont’d)
PARAMETER
SYMBOL
DS1225AB- 150
DS1225AD- 150
DS1225AB-200
DS1225AD-200
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
t
OH
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
MIN
150
MAX
MIN
200
MAX
UNITS
NOTES
150
70
150
5
35
5
150
100
0
0
10
35
5
60
0
10
5
80
0
10
5
200
100
0
0
10
5
200
100
200
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
5
3
12
13
5
5
4
12
13
35
5 of 10
京公网安备 11010802033920号
EEWORLD
