This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR421x Series
(UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
■
Features
0.75 max.
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
(0.8)
7.6
■
Resistance by Part Number
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR4210
UNR4211
UNR4212
UNR4213
UNR4214
UNR4215
UNR4216
UNR4217
UNR4218
UNR4219
UNR421D
UNR421E
UNR421F
UNR421K
UNR421L
(UN4210)
(UN4211)
(UN4212)
(UN4213)
(UN4214)
(UN4215)
(UN4216)
(UN4217)
(UN4218)
(UN4219)
(UN421D)
(UN421E)
(UN421F)
(UN421K)
(UN421L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
Collector-base voltage (Emitter open)
nt
in
Parameter
ue
■
Absolute Maximum Ratings
T
a
=
25°C
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-emitter voltage (Base open)
Collector current
ce
Total power dissipation
an
Junction temperature
M
ai
nt
en
Storage temperature
T
stg
Pl
e
Publication date: December 2003
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t/s e
cy
c/ st
en in
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e
fo
st
rm
ag
at
e.
io
n.
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
0.45
+0.20
–0.10
15.6
±0.5
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
1
2
3
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
New S type package, allowing supply with the radial taping
Internal Connection
R
1
B
R
2
Rating
50
50
Unit
V
V
1: Emitter
2: Collector
3: Base
NS-B1 Package
C
E
is
co
100
300
150
mA
°C
/D
mW
°C
−55
to
+150
Note) The part numbers in the parenthesis show conventional part number.
SJH00020BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR421x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current
UNR4210/4215/4216/4217
UNR4213
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
Min
50
50
0.1
0.5
0.01
0.1
0.2
0.5
1.0
1.5
2.0
h
FE
V
CE
=
10 V, I
C
=
5 mA
20
30
35
60
80
160
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
f
T
R
1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
150
0.51
1.0
4.7
10
22
47
R
1
/R
2
0.08
0.17
0.37
0.8
1.70
1.70
3.7
0.10
0.21
0.47
1.0
2.13
2.14
4.7
0.12
0.25
0.57
1.2
2.60
2.60
5.7
+30%
MHz
kΩ
4.9
0.2
460
0.25
V
V
V
Typ
Max
Unit
V
V
µA
µA
mA
(Collector open) UNR4212/4214/421D/421E
UNR4211
UNR421F/421K
UNR4219
UNR4218/421L
Forward current UNR4218/421K/421L
transfer ratio
UNR4219/421D/421F
UNR4211
UNR4212/421E
UNR4213/4214
UNR4210
*
/4215
*
/4216
*
/
4217
*
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR4213/421K
UNR421D
UNR421E
Transition frequency
Input
resistance
UNR4218
UNR4219
UNR4216/421F/421L
UNR4211/4214/4215/421K
UNR4212/4217
UNR4210/4213/421D/421E
Resistance
ratio
UNR4218/4219
UNR4214
UNR421F
UNR4211/4212/4213/421L
UNR421K
UNR421E
UNR421D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00020BED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR421x Series
Common characteristics chart
P
T
T
a
400
Total power dissipation P
T
(mW)
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR4210
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
10
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.3 mA
0.6 mA
0.7 mA
0.1 mA
30
1
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
20
10
0
0
1
10
100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
Input voltage V
IN
(V)
10
3
10
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00020BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR421x Series
Characteristics charts of UNR4211
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Forward current transfer ratio h
FE
10
300
T
a
=
75°C
80
0.3 mA
1
25°C
0.1
−25˚C
200
25°C
100
−25°C
0.2 mA
40
T
a
=
75°C
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
100
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4212
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
0.1
−25°C
40
0.2 mA
100
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
SJH00020BED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR421x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
100
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
10
3
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR4213
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
10
300
T
a
=
75°C
25°C
−25°C
1
200
40
0.2 mA
25°C
0.1
−25°C
0.01
0.1
T
a
=
75°C
100
0.1 mA
0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
100
V
O
=
0.2 V
T
a
=
25°C
5
4
3
Output current I
O
(µA)
Input voltage V
IN
(V)
10
3
10
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00020BED
5
DSP and ARM Processors
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