UNR1111 datasheet, PDF - EEWORLD Datasheet

UNR1111: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size178KB，13 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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UNR1111 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, M-A1, 3 PIN

Parameter Name	Attribute value
Maker	Panasonic
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	35
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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