V
RRM
=
I
F
=
4500 V
84 A
Fast-Diode Die
5SLY 12L4500
Die size: 12.9 x 12.9 mm
Doc. No. 5SYA 1675-01 May 08
•
•
•
•
Ultra low losses
Fast and soft reverse-recovery
Large SOA
Passivation: SIPOS and silicon nitride plus polyimide
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
4500
84
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
168
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 84 A
V
R
= 4500 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 84 A,
V
R
= 2800 V,
di/dt = 600 A/µs,
L
σ
= 1000 nH,
Inductive load,
Switch:
2x 5SMY12L4500
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
3.1
3.4
1.5
2
120
135
60
95
680
870
85
135
max
Unit
V
V
µA
4
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLY 12L4500
168
147
126
25 °C
I
rr
[A], Q
rr
[µC]
105
I
F
[A]
125 °C
84
63
42
200
180
160
140
120
100
80
60
40
V
CC
= 2800 V
di/dt = 600 A/µs
T
vj
= 125 °C
L
s
= 1000 nH
84
126
I
F
[A]
168
210
I
rr
E
rec
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
42
252
E
rec
[J]
E
rec
[mJ]
21
0
0
1
2
V
F
[V]
3
4
5
Q
rr
20
0
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
250
84
V
CC
= 2800 V
I
F
= 84 A
di/dt = 600 A/µs
T
vj
= 125 °C
L
σ
= 1000 nH
0
200
V
CC
= 2800 V
I
F
= 84 A
T
vj
= 125 °C
L
s
= 1000 nH
E
rec
I
rr
[A], Q
rr
[µC]
-1000
V
R
[V]
I
R
-42
-1500
150
0.25
42
-500
0.2
0
I
R
[A]
0.15
100
Q
rr
I
rr
50
0.1
-84
-2000
0.05
-126
V
R
-168
0
1
2
3
time [µs]
4
5
6
-2500
-3000
0
250
500
750
di/dt [A/µs]
1000
0
1250
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1675-01 May 08
page 2 of 3
5SLY 12L4500
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W
front metal
thickness
Metallization
3)
3)
Unit
12.9 x 12.9
8.48 x 8.48
560
±
15
AlSi1
AlSi1 + TiNiAg
4
1.8 + 1.2
mm
mm
µm
µm
µm
front (A)
back (K)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
12.9
8.48
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA 1675-01 May 08
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