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2SB947P

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size236KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SB947P Overview

Transistor

2SB947P Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB947
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(sat)
= -0.6V(Max)@I
C
= -7A
·High
Speed Switching
APPLICATIONS
·Designed
for low-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
-40
V
-20
V
-5
V
-10
A
-15
A
2
W
35
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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