Power Field-Effect Transistor, 0.16ohm, N-Channel, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Hitachi （Renesas ） |
| Parts packaging code | TO-3PL |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 30 A |
| Maximum drain-source on-resistance | 0.16 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 200 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
