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RGF1J

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size88KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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RGF1J Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA

RGF1A THRU RGF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION
FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 1000 Volts
*
E
DO-214BA
MODIFIED J-BEND
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief
Easy pick and place
Fast switching for high efficiency
High temperature soldering guaranteed:
450°C/5 seconds at terminals
Complete device submersible temperature of
265°C for 10 seconds in solder bath
P
A
T
E
0.060 (1.52)
0.040 (1.02)
N
T
D
0.187 (4.75)
0.167 (4.24)
0.0105 (0.27)
0.0065 (0.17)
0.118 (3.00)
0.106 (2.69)
0.108 (2.74)
0.098 (2.49)
0.060 (1.52)
0.030 (0.76)
0.152
TYP.
0.006
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
®
*
Glass-plastic encapsulation technique is covered by
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case:
JEDEC DO-214BA molded plastic over glass body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.0048 ounce, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS RGF1A
RGF1B
RGF1D
RGF1G
RGF1J
RGF1K
RGF1M
UNITS
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=120°C
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC method)
Maximum instantaneous forward voltage at 1.0A
Maximum full load reverse current,
full cycle average,
T
A
=55°C
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
RA
50
35
50
RB
100
70
100
RD
200
140
200
RG
400
280
400
1.0
30.0
1.30
50.0
5.0
100
RJ
600
420
600
RK
800
560
800
RM
1000
700
1000
Volts
Volts
Volts
Amp
Amps
Volts
µA
µA
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
150
8.5
85.0
28.0
-65 to +175
250
500
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied Vr=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98

RGF1J Related Products

RGF1J RGF1M RGF1D RGF1G RGF1A RGF1B
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214BA

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