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RG3J

Description
3 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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RG3J Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

RG3A THRU RG3M
GLASS PASSIVATED FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
3.0 Amperes
FEATURES
D
Case Style G3
1.0 (25.4)
MIN
0.250 (6.3)
0.170 (4.3)
DIA.
0.300 (7.6)
MAX.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN
High temperature metallurgically bonded
construction
Glass passivated cavity-free junction
Hermetically sealed package
3.0 Ampere operation
at T
A
=55°C with
no thermal runaway
Typical I
R
less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
P
A
T
E
N
T
E
*
MECHANICAL DATA
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
Case:Solid
glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
RG3A
RG3B
RG3D
RG3G
RG3J
RG3K
RG3M
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum average reverse current
at rated peak reverse voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
220
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
I
FSM
V
F
I
R(AV)
I
R
t
rr
C
J
R
ΘJA
T
J
, T
STG
150
100.0
1.3
2.0
100.0
5.0
250
40.0
22.0
-65 to +175
400
500
Amps
Volts
µA
µA
ns
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
r
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, with both leads attached to heat sink
4/98

RG3J Related Products

RG3J RG3K RG3M RG3G RG3B RG3D RG3A
Description 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AP 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AP 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-204AP 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AP 3 A, 50 V, SILICON, RECTIFIER DIODE
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