DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D168
BZG142
SMA ZenBlock™; zener
with integrated blocking diode
Product specification
Supersedes data of 2001 Apr 17
2001 Aug 20
Philips Semiconductors
Product specification
SMA ZenBlock™; zener
with integrated blocking diode
FEATURES
•
Zener and 600 V/250 ns blocking diode in one package
•
Protects the MOSFET in power IC controllers such as
STARPlug™
(1)
, TOPSwitch™
(2)
and VIPer™
(3)
•
High surge capability
•
Supports valley switching
•
Glass passivated junctions
•
Excellent clamping capability and stability
•
Supplied in 12 mm embossed tape.
DESCRIPTION
The SMA ZenBlock™ is designed to protect the MOSFET
in flyback converters against over-voltages caused by the
transformer leakage inductance. The SMA ZenBlock™
combines a zener/TVS with a fast soft-recovery diode in
one package, and can be used to replace double diode,
RC or RCD snubbers.
The BZG142 consists of a glass passivated chip in a
DO-214AC surface mount package.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
Top view
BZG142
Side view
MGU215
Fig.1 Simplified outline (DO-214AC) and symbol.
handbook, halfpage
Vo
ZENBLOCK
CONTROL
MLD682
(1) STARPlug is a trademark of Philips.
(2) TOPSwitch is a trademark of Power Integrations.
(3) VIPer is a trademark of STMicroelectronics.
Fig.2 Typical application.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
T
stg
T
j
Zener
P
tot
P
ZSM
total power dissipation
non-repetitive peak reverse power
dissipation
non-repetitive peak reverse power
dissipation
T
tp
= 105
°C;
see Fig.3
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge;
see Figs 5 and 6
10/1000
µs
exponential pulse;
T
j
= 25
°C
prior to surge; see Fig.4
−
−
2.8
400
W
W
PARAMETER
storage temperature
junction temperature
CONDITIONS
MIN.
−65
−65
MAX.
+175
+175
UNIT
°C
°C
P
RSM
−
150
W
Blocking diode
V
R
E
RSM
continuous reverse voltage
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j(max)
prior to
surge; inductive load switched off
2
−
−
600
7.5
V
mJ
2001 Aug 20
Philips Semiconductors
Product specification
SMA ZenBlock™; zener
with integrated blocking diode
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
TYPE
NUMBER
SUFFIX
(1)
TEMPERATURE
COEFFICIENT
S
Z
(%/K) at I
test
MIN.
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
MAX.
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
10
5
5
5
5
5
5
5
TEST
CURRENT
CLAMPING
VOLTAGE
V
(CL)R
(V)
MAX.
97
130
143
171
214
228
258
288
1.54
1.15
1.05
0.88
0.70
0.66
0.58
0.52
BZG142
REVERSE CURRENT
at STAND-OFF
VOLTAGE
I
R
(µA)
T
j
= 150
°C
MAX.
100
100
100
100
100
100
100
100
56
75
82
100
120
130
150
160
at V
R
(V)
V
Z
(V) at I
test
(see Fig.7)
MIN.
NOM.
68
91
100
120
150
160
180
200
MAX.
75
100
110
132
165
176
198
220
I
test
(mA)
at I
RSM
(A)
(2)
68
91
100
120
150
160
180
200
Notes
61
82
90
108
135
144
162
180
1. To complete the type number the suffix is added to the basic type number, e.g. BZG142-68.
2. Non-repetitive peak reverse current in accordance with
“IEC 60060-1, Section 8”
(10/1000
µs
pulse); see Fig.4.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)R
C
ZB
I
R
PARAMETER
ZenBlock capacitance
reverse current
CONDITIONS
f = 1 MHz; V
R
= 0; see Fig.8
V
R
= 600 V
V
R
= 600 V; T
j
= 150
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.9.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
MIN.
700
−
−
−
TYP.
−
15
−
−
MAX.
−
−
5
100
UNIT
V
pF
µA
µA
reverse avalanche breakdown voltage I
R
= 0.1 mA
2001 Aug 20
3
Philips Semiconductors
Product specification
SMA ZenBlock™; zener
with integrated blocking diode
GRAPHICAL DATA
BZG142
handbook, halfpage
4
MBH451
IRSM
handbook, halfpage
(%)
100
90
Ptot
(W)
3
2
50
1
10
t
0
0
100
T (°C)
200
t1
t2
MGD521
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
printed-circuit board as shown in Fig.9.
In accordance with
“IEC 60060-1, Section 8”.
t
1
= 10
µs.
t
2
= 1000
µs.
Fig.3
Maximum total power dissipation as a
function of temperature.
Fig.4
Non-repetitive peak reverse current pulse
definition.
10
5
handbook, halfpage
PZSM
(W)
10
4
MLD681
handbook, halfpage
derating
120
MGU425
percentage
(%) 100
80
10
3
60
40
10
2
20
10
10
−1
1
10
10
2
10
3
10
4
tp (µs)
0
0
40
80
120
200
160
Tamb (°C)
T
j
= 25
°C
prior to surge.
See Fig.6.
Fig.5
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.6
Peak pulse power (P
ZSM
, P
RSM
) or current
(I
RSM
) derating curve.
2001 Aug 20
4
Philips Semiconductors
Product specification
SMA ZenBlock™; zener
with integrated blocking diode
BZG142
handbook, halfpage
1500
MLD679
handbook, halfpage
16
MLD680
IZ
(mA)
1000
CZB
(pF)
12
(1)
(2)
8
(3)
500
(1)
(2)
(3)
4
0
50
100
150
200
250
VZ (V)
Measured under pulsed conditions.
Solid line: T
amb
= 25
°C.
Dotted line: T
amb
= 150
°C.
(1) V
Z
= 68 V.
(2) V
Z
= 120 V.
(3) V
Z
= 200 V.
300
0
−200
0
200
400
VR (V)
600
(1) V
Z
= 68 V.
(2) V
Z
= 120 V.
(3) V
Z
= 200 V.
Fig.7
Working current as a function of working
voltage; typical values.
Fig.8
ZenBlock capacitance as function of
reverse voltage; typical values.
50
4.5
50
2.5
1.25
MSB213
Dimensions in mm.
Fig.9 Printed-circuit board for surface mounting.
2001 Aug 20
5
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