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JANTX1N6632US

Description
Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size59KB,2 Pages
ManufacturerCompensated Devices Inc.
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JANTX1N6632US Overview

Zener Diode, 3.3V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

JANTX1N6632US Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionO-LELF-R2
Reach Compliance Codeunknown
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
GuidelineMIL-19500/356H
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance5%
Working test current380 mA
Base Number Matches1
• AVAILABLE IN
JAN, JANTX, JANTXV,
AND
JANS
PER MIL-PRF-19500/356
• 5 WATT ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6632US
THRU
1N6637US
AND
1N5968US
AND
1N5969US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 5W @ TEC=+125°C
Power Derating: 100mW/°C above TEC=+125°C
Forward Voltage: 1.5 V dc @ IF=1A dc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
NOMINAL
TEST
ZENER CURRENT
VOLTAGE
IZT
VZ@IZT
±5%
VOLTS
1N6632US
1N6633US
1N6634US
1N6635US
1N6636US
1N6637US
1N5968US
1N5969US
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
mA
380
350
320
290
260
240
220
220
OHMS
3.0
2.5
2.0
2.0
2.0
1.5
1.0
1.0
OHMS
500
500
500
500
450
400
400
1000
VOLTS
0.90
0.80
0.75
0.70
0.60
0.50
0.4
0.5
MAXIMUM ZENER IMPEDANCE
TYPE
ZZ@IZT
ZZK(1)
@
IZK=5mA
MAXIMUM REVERSE
LEAKAGE CURRENT
VOLTAGE
DIM
D
F
G
S
SURGE
CURRENT
IZSM
AMPS
20.0
18.7
17.6
16.4
15.3
14.4
20
20
MILLIMETERS
MIN
MAX
3.48
3.76
0.48
0.71
5.08
5.72
0.03MIN.
INCHES
MIN MAX
.137 .148
0.019 0.028
.200 .225
.001MIN.
REGULATION
v
VZ
IR
VR
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
4.28
4.74
FIGURE 1
µ
A
300
250
175
25
20
5
5000
1000
DESIGN DATA
CASE:
D-5B, Hermetically sealed glass
case, PER MIL-PRF 19500/356
LEAD FINISH:
Tin / Lead
NOTE 1
IZK=1.0 mA for 1N5969
THERMAL RESISTANCE: (R
OJEC):
10 ˚C/W maximum at L = 0
THERMAL IMPEDANCE: (Z
OJX): 3
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

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