VISHAY
ZMY1 to ZMY100
Vishay Semiconductors
Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• For use in stablilizing and clipping circuits with
high power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
• These diodes are also available in the DO-41 case
with the type designation ZPY1 ... ZPY100.
18315
Mechanical Data
Case:
MELF Glass Case
Weight:
approx. 250 mg
Packaging Codes/Options:
E4 / 5k per 13 " reel (12 mm tape), 10k/box
25 / 1.5k per 7 " reel (12 mm tape), 12k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current (see Table
"Characteristics")
Power dissipation
1)
Test condition
Symbol
Value
Unit
P
tot
1.0
1)
W
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient (max.)
Thermal resistance junction to
case (typ.)
Junction temperature
Storage temperature
1)
Test condition
Symbol
R
θJA
R
θJC
T
j
T
S
Value
170
1)
60
175
- 55 to + 175
Unit
°C/W
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature.
Document Number 85788
Rev. 2, 10-Sep-03
www.vishay.com
1
ZMY1 to ZMY100
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage (2)
Dynamic Resistance
Temperature Coefficient
of Zener Voltage
α
VZ
@ I
ZT
10
-4
/°C
typ
8
7
7
7
5
2
2
2
2
2
4
4
7
7
9
9
10
11
12
13
14
15
20
20
60
60
80
80
100
100
130
130
160
160
250
250
6.5
4
4
4
2
1
1
1
1
1
2
2
3
3
4
4
5
5
6
7
8
9
10
11
25
30
35
40
45
50
60
65
70
80
120
130
min
-26
-7
-7
-7
-6
-3
-1
0
0
3
3
5
5
5
5
5
7
7
7
7
7
7
7
7
7
8
8
8
8
8
8
8
8
8
9
9
max
-23
2
3
4
5
5
6
7
7
8
8
9
10
10
10
10
11
11
11
11
12
12
12
12
12
12
13
13
13
13
13
13
13
13
13
13
5
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
-
-
-
-
0.7
1.5
2
3
5
6
7
7.5
8.5
9
10
11
12
14
15
17
18
20
22.5
25
27
29
32
35
38
42
47
51
56
61
68
75
Test
Current
I
ZT
mA
Reverse
Voltage
VISHAY
Admissible
Zener
Current (1)
I
Z
@
T
amb
=25°C
mA
406
203
182
165
150
135
128
110
100
89
82
74
66
60
55
49
44
40
36
34
29
27
25
22
20
18
17
15
14
13
11
10
9
8
7.5
7
V
Z
@ I
ZT
V
min
ZMY1
ZMY3.9
ZMY4.3
ZMY4.7
ZMY5.1
ZMY5.6
ZMY6.2
ZMY6.8
ZMY7.5
ZMY8.2
ZMY9.1
ZMY10
ZMY11
ZMY12
ZMY13
ZMY15
ZMY16
ZMY18
ZMY20
ZMY22
ZMY24
ZMY27
ZMY30
ZMY33
ZMY36
ZMY39
ZMY43
ZMY47
ZMY51
ZMY56
ZMY62
ZMY68
ZMY75
ZMY82
ZMY91
ZMY100
1)
2)
r
zj
@ I
ZT
, f = 1 kHz
Ω
max
0.75
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
88
96
106
V
R
@
I
R
= 0.5
µA
V
0.65
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
Valid provided that electrodes are kept at ambient temperature
Tested with pulses t
p
= 5 ms
The ZMY1 is a silicon diode operated in forward direction.Hence, the index of all characteristics and maximum ratings should be "F"instead
of "Z". Connect the cathode terminal to the negative pole. For devices in glass case MELF with higher Zener voltage but same power dis-
sipation see types ZMU100 ... ZMU180
www.vishay.com
2
Document Number 85788
Rev. 2, 10-Sep-03
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
ZMY1 to ZMY100
Vishay Semiconductors
18312
18289
Figure 1. Dynamic Resistance vs. Zener Current
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
18313
18286
Figure 2. Dynamic Resistance vs. Zener Current
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
18314
Figure 3. Dynamic Resistance vs. Zener Current
Document Number 85788
Rev. 2, 10-Sep-03
www.vishay.com
3
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