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LMV358DR2G

Description
Operational Amplifier, Low Power, Rail to Rail Output, CMOS Op-Amp, SOIC-8 Narrow Body, 2500-REEL
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size575KB,23 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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LMV358DR2G Overview

Operational Amplifier, Low Power, Rail to Rail Output, CMOS Op-Amp, SOIC-8 Narrow Body, 2500-REEL

LMV358DR2G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Manufacturer packaging code751-07
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Minimum Common Mode Rejection Ratio50 dB
Nominal Common Mode Rejection Ratio63 dB
frequency compensationYES
Maximum input offset voltage9000 µV
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
low-biasNO
low-dissonanceNO
micropowerYES
Humidity sensitivity level1
Number of functions2
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
method of packingTAPE AND REEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
powerNO
power supply2.7/5 V
Programmable powerNO
Certification statusNot Qualified
Maximum seat height1.75 mm
Nominal slew rate1 V/us
Maximum slew rate0.615 mA
Supply voltage upper limit5.5 V
Nominal supply voltage (Vsup)2.7 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal Uniform Gain Bandwidth1000 kHz
Minimum voltage gain10000
broadbandNO
width3.9 mm
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