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MP1501(W)

Description
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CategoryDiscrete semiconductor    Ordinary rectifier bridge   
File Size811KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

MP1501(W) Overview

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MP1501(W) Parametric

Parameter NameAttribute value
PackageMP,MP-W
Maximum recurrent peak reverse voltage100
Maximum average forward rectified current7.5
Peak forward surge current300
Maximum instantaneous forward voltage1.1
Maximum reverse current10
TJ(℃)-55~+150
MP15005(W)-MP1510(W)
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
15.0
A
MP
MP - W
METAL HEAT SINK
Features
Rating to 1000V PRV
Surge overload rating to
300
Am peres peak
Ideal for printed circuit board
.732 (18.6)
.693 (17.6)
Max. .311 (7.9)
.480 (12.2)
.425 (10.8)
PLASTIC
1.142 (29)
1.102 (28)
.673 (17.1)
.634 (16.1)
Hole for # 10 screw
Min f.200 (5.08)
φ
1 .0± 0.1
28.6± 0.4
1.142 (29)
1.102 (28)
.673 (17.1)
.634 (16.1)
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
φ
5.2 TYP.
17.9± 0.5
12.7± 0.5
17.9± 0.5
28.6± 0.4
.583 (14.8)
.543 (13.8)
.32 x .252 (0.81 x 6.35)
MP-15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MP
15005
(W)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
MP
1501
(W)
100
70
100
MP
1502
(W)
200
140
200
MP
1504
(W)
400
280
400
15.0
MP
1506
(W)
600
420
600
MP
1508
(W)
800
560
800
MP
1510
(W)
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
I²t Rating for fusing @Tj=25℃
Maximum instantaneous forw ard voltage
at
7.50
A
Maximum reverse current
at rated DC blocking voltage
Typical thermal resistance per leg
I
FSM
I²t
300.0
V
F
I
R
R ΘJA
RθJC
1.1
10.0
1.0
V
μA
mA
℃/W
@T
A
=25
@T
A
=100
19
2
- 55 ---- + 150
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
T
J
T
STG
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
23 MIN
A
A²S
8.0± 0.1
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