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KSA954YJ18Z

Description
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size50KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSA954YJ18Z Overview

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

KSA954YJ18Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)135
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
KSA954
KSA954
Audio Frequency Amplifier
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-80
-80
-5
-300
-500
600
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
* PW≤10ms, Duty Cycle≤50% Pulsed
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
BE
(sat)
V
CE
(sat)
C
ob
f
T
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Base Emitter On Voltage
* Base Emitter Saturation Voltage
Collector -Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Test Condition
V
CB
= -80V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -1V, I
C
= -50mA
V
CE
= -2V, I
C
= -300mA
V
CE
= -6V, I
C
= -10mA
I
C
= -300mA, I
B
= -30mA
I
C
= -300mA, I
B
= -30mA
V
CB
= -6V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -10mA
50
90
30
-600
200
80
-660
-0.85
-0.15
13
100
Min.
Typ.
Max.
-100
-100
400
-700
-1.2
-0.6
25
mV
V
V
pF
MHz
Units
nA
nA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE1
Classification
Classification
h
FE1
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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