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BCR166WE6327HTSA1

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size837KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCR166WE6327HTSA1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN

BCR166WE6327HTSA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
BCR166...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 4.7 kΩ ,
R
2
= 47 kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR166
BCR166W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR166
BCR166W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR166,
T
S
102°C
BCR166W,
T
S
124°C
Junction temperature
Storage temperature
Marking
WTs
WTs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
30
5
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-29
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