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Datasheet> All Categories > Discrete semiconductor> The transistor> D44H8AN
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D44H8AN

Description
10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size343KB，59 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

D44H8AN Overview

10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

D44H8AN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1

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•
Low Collector–Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
•
Fast Switching Speeds
•
Complementary Pairs Simplifies Designs
(1) Pulse Width
Preferred
devices are Motorola recommended choices for future use and best overall value.
. . . for general purpose power amplification and switching such as output or driver
stages in applications such as switching regulators, converters and power amplifiers.
Complementary Silicon Power
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TJ = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Motorola Bipolar Power Transistor Device Data
(VCE = 1.0 Vdc, IC = 4.0 Adc)
DC Current Gain
(VCE = 1.0 Vdc, IC = 2.0 Adc)
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Power Dissipation
@ TC = 25
_
C
@ TA = 25
_
C
Collector Current — Continuous
— Peak (1)
Emitter Base Voltage
Collector–Emitter Voltage
v
6.0 ms, Duty Cycle
v
50%.
Rating
Characteristic
Characteristic
Symbol
TJ, Tstg
VCEO
VEB
PD
IC
D44H8,11
D45H8,11
D44H8,11
D44H8,11
D44H10
D45H10
D44H10
D45H10
60
8
D44H or D45H
– 55 to 150
50
1.67
5.0
10
20
10, 11
80
Symbol
hFE
Watts
Unit
Adc
Vdc
Vdc
_
C
Symbol
R
θJC
R
θJA
TL
Min
40
20
60
35
D45H Series
*
D44H Series
*
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
*Motorola Preferred Device
Max
275
2.5
75
CASE 221A–06
TO–220AB
Max
—
—
—
—
NPN
PNP
_
C/W
_
C/W
Unit
_
C
Unit
3–411
—

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