Applications
• High isolation
switching
• Detection
• Mixing
• Voltage control
• Tuning
• Phase shifting
• Receiver protection
Miniature 0402 Surface Mount
Technology Packaged RF Diodes
Skyworks offers a variety of 0402 surface mount technology (SMT) diodes including
PIN diodes for switch and attenuator applications, limiter diodes for receiver protection
applications, Schottky diodes for detector and mixer applications and tuning varactor diodes
for VCO, voltage tuned filters and phase shifter applications. These small form factor devices
offer low parasitic inductance and low thermal impedance, making them ideal for a variety
of markets including WLAN, WiMAX, cellular handset, cellular infrastructure, automotive,
CATV/Satcom, smart energy, medical, military, RFID, and test and measurement.
PIN Diodes for Switch and Attenuator Applications
Part Number
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
Feature/Application
High Isolation Switching
Fast Switching/High Isolation
High Isolation
Moderate Power Switching
High Power Switching
High Isolation Switching
Attenuator
Characteristics
Very Low Capacitance (0.13 pF), Isolation 40 dB
Low Capacitance, Fast Switching
Low Capacitance
Low Capacitance, Low Resistance
Low Distortion
Low Resistance (0.5
W
Typ.)
Low Distortion, Low Drive Current
Features
• Low parasitic
inductance 0.45 nH
• Low thermal
impedance 50° C/W
• Small form factor
1.0 x 0.6 x 0.46 mm
• Frequency range
10 MHz–12 GHz
Limiter Diodes for Receiver Protection Applications
Part Number
SMP1330-040LF
Feature/Application
Low Capacitance, Low Threshold Level
Characteristics
Fast Recovery Time (5 ns Typ.)
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to
Skyworks Definition
of Green™,
document number SQ04-0074.
Schottky Diodes for Detector and Mixer Applications
Part Number
SMS7621-040LF
SMS7630-040LF
SMS3922-040LF
SMS3923-040LF
SMS3924-040LF
SMS3925-040LF
Feature/Application
High Sensitivity Detector
Most Sensitive Detector
Higher Input Power
Higher Input Power
High Sensitivity Detector
High Sensitivity/High Input Power
Characteristics
Low Barrier Height, Low Capacitance
Lowest Barrier Height, Low Capacitance
Medium Barrier Height
Medium Barrier Height
Medium/High Barrier, High Voltage Breakdown
High Barrier Height
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to
Skyworks Definition of Green™,
document number SQ04-0074.
Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications
Part Number
SMV1213-040LF
SMV1248-040LF
SMV1253-040LF
SMV1255-040LF
SMV1430-040LF
SMV2019-040LF
SMV1231-040LF
SMV1232-040LF
SMV1233-040LF
SMV1234-040LF
SMV1235-040LF
SMV1236-040LF
SMV1405-040LF
SMV1705-040LF
SMV1247-040LF
SMV1763-040LF
SMV1249-040LF
Feature/Application
Low Series Resistance, High Tuning Range
High Tuning Range
High Capacitance, Low Series Resistance
Low Series Resistance, High Tuning Range
Low Capacitance, Abrupt Junction
High Capacitance Ratio at Low Voltage (C
T1
/C
T3
= 1.55 Typ.)
High Capacitance Ratio at Low Voltage (C
T1
/C
T3
= 1.65 Typ.)
High Capacitance Ratio at Low Voltage (C
T1
/C
T3
= 1.70 Typ.)
High Capacitance Ratio at Low Voltage (C
T1
/C
T3
= 1.70 Typ.)
Low Series Resistance, High Tuning Range
Low Series Resistance, High Tuning Range
Low Series Resistance, High Tuning Range
Low Capacitance, High Q, Abrupt Junction
Low Series Resistance, High Tuning Range
Low Capacitance, High Q
Low Capacitance, Low Series Resistance
Wide Tuning Range
Characteristics
Capacitance (19 pF @ 1.0 V, 5.5 pF @ 4.0 V), R
S
(1.4
Ω)
Capacitance (11.3 pF @ 1.0 V, 1.57 pF @ 4.0 V), R
S
(2.0
Ω)
Capacitance (33.6 pF @ 1.0 V, 4.13 pF @ 4.0 V), R
S
(0.8
Ω)
Capacitance (34.0 pF @ 1.0 V, 5.8 pF @ 4.0 V), R
S
(0.8
Ω)
Capacitance (0.91 pF @ 1.0 V, 0.60 pF @ 4.0 V), R
S
(2.7
Ω)
Capacitance (1.43 pF @ 1.0 V, 0.23 pF @ 20.0 V), Q (500)
Capacitance (1.49 pF @ 1.0 V, 0.71 pF @ 4.0 V), R
S
(2.9
Ω)
Capacitance (2.52 pF @ 1.0 V, 1.18 pF @ 4.0 V), R
S
(1.2
Ω)
Capacitance (3.34 pF @ 1.0 V, 1.53 pF @ 4.0 V), R
S
(1.2
Ω)
Capacitance (6.57 pF @ 1.0 V, 2.87 pF @ 4.0 V), R
S
(0.8
Ω)
Capacitance (11.56 pF @ 1.0 V, 5.05 pF @ 4.0 V), R
S
(0.6
Ω)
Capacitance (16.95 pF @ 1.0 V, 7.50 pF @ 4.0 V), R
S
(0.35
Ω)
Capacitance (2.8 pF @ 0 V, 0.56 pF @ 30.0 V), Q (3200)
Capacitance (18.49 pF @ 1.0 V, 6.13 pF @ 4.0 V), R
S
(0.3
Ω)
Capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), Q (1500)
Capacitance (6.7 pF @ 0.5 V, 2.6 pF @ 1.5 V), R
S
(0.7
Ω)
Capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V), CTR (12:1)
PIN Diodes
PIN diodes are some of the most widely used diodes in
the world and range in applications from RF switching
in satellite television receiver low noise block converters
(LNB), to automotive remote garage door openers,
to land mobile radio transceivers and cable television
automatic level controls.
PIN diodes are three layer diodes, comprised of a heavily
doped anode (the “P” layer) and a heavily doped cathode
(the “N” layer) separated by a virtually undoped intrinsic
layer (the “I” layer). Under forward bias, charge carriers
from the P and the N layers are forced into the I layer,
which reduces its RF impedance. When a reverse bias
voltage is applied across the PIN diodes, all free charge
carriers are removed from the I layer, thereby causing its
RF impedance to increase. This variable RF impedance
versus DC, or low frequency bias signal, allows the diode
to be used in RF switching circuits in which the PIN
diode is either heavily forward-biased or reverse biased.
In RF attenuation circuits, the PIN diode is utilized as a
continuously-variable RF resistance by controlling the
magnitude of the DC bias current through the diode.
I
CTRL1
RF
Common
I
CTRL2
Switching Applications
The circuit below shows a pair of PIN diodes used to
form a single pole, double throw switch. In this switch, a
positive control current typically of the order of 10 mA is
applied to one of the bias inputs to place that side of the
switch into its low insertion loss state, while a negative
bias voltage is applied to the other bias input, forcing
the diode on that side of the switch into its maximum RF
impedance state to produce high isolation on that side of
the switch.
Many other switching circuit variations exist. Please refer
to “Design with PIN Diodes” available on our Web site at
www.skyworksinc.com for more information.
I
CTRL1
RF
Common
I
CTRL2
L1
C1
J1
D1
SMP1345-040LF
C2
L3
C3
J2
D2
L2
SMP1345-040LF
Typical SPDT Switch
L1
J1
C1
D1
C2
L3
C3
D2
J2
Attenuation Applications
A resistive attenuator can be built utilizing one or more
PIN diodes. In this type of circuit, the RF resistance of the
PIN diode is adjusted to a desired value by varying the
magnitude of the DC bias current applied to the diode.
This resistance produces attenuation.
The diagrams below show an attenuator that utilizes
three PIN diodes. Many other PIN diode circuit
configurations are also possible. Please refer to “Design
with PIN Diodes” available on our Web site at
www.skyworksinc.com for more information.
RF #2
L2
Wide Bandwidth Single Pole Double Throw Switch
Bias 1
RF
Common
C
BLOCK
C
FILTER
RF
Choke
SMP1345
-040LF
RF
Choke
SMP1345
-040 LF
RF
Choke
C
FILTER
Bias 2
RF #1
C
BLOCK
SMP1321-040LF
SMP1321-040LF
C
BLOCK
High Isolation PIN Diode Single Pole Double Throw Switch
R
3
R
1
R
2
100
Series Resistance (W)
10
SMP1321
SMP1320
1
RF Input
D
3
(R
S3
)
RF Output
D
1
(R
S1
)
D
2
(R
S2
)
0.1
0.1
1
10
100
Forward Current (mA)
Series Resistance vs. Forward Current
Pi Attenuator
100
100
Series Resistance (W)
Series Resistance (W)
10
SMP1345
10
1
SMP1340
1
SMP1322
0.1
0.1
0.01
0.1
0.1
1
10
100
1
10
100
Forward Current (mA)
Series Resistance vs. Forward Current
Forward Current (mA)
Series Resistance vs. Forward Current
1000
1000
Series Resistance (W)
Series Resistance ( )
100
100
SMP1302
10
10
SMP1352
1
1
0.1
0.01
0.1
1
10
100
0.1
0.01
0.1
1
10
100
Forward Current (mA)
Forward Current (mA)
Series Resistance vs. Forward Current
Series Resistance vs. Forward Current
PIN Diodes for Switch and Attenuator Applications
Part Number
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
Product Description
High Isolation Switching PIN Diode
Fast Switching/High Isolation PIN Diode
High Isolation (LNB/Multiswitch) PIN Diode
Moderate Power Handling
High Power Switching
High Isolation Switching
Attenuator
Key Features
Very Low Capacitance 0.14 pF, Isolation 40 dB
Low Capacitance, Low Series Resistance
Low Capacitance, Series Pair
Low Capacitance, Low Resistance
Lower Distortion
Low Resistance (0.5
W
Typ.)
Low Distortion/Low Drive Current
Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to
Skyworks Definition of Green™,
document number SQ04-0074.
Electrical Specifications
Max. V
R
I
R
= 10 µA
(V)
50
50
100
50
200
50
200
C
T
V
R
= 30 V
(pF)
–
–
0.025 Max.
0.25 Max.
–
1.0 Max.
0.30 Max.
C
T
V
R
= 5 V
(pF)
0.20 Max.
0.30 Max.
–
–
–
–
–
C
T
V
R
= 20 V
(pF)
–
–
–
–
0.30 Max.
–
–
Typ. V
F
I
F
= 10 mA
(V)
0.89
0.85
0.85
0.85
0.80
0.85
0.80
R
S
I
F
= 1 mA
F = 100 MHz
(W)
3.5 Typ.
–
3.0 Typ.
2.0 Typ.
15 Max.
1.5 Max.
20 Max.
Max. R
S
I
F
= 10 mA
F = 100 MHz
(W)
2.0
1.2
2.0
0.9
2.8
0.5 Typ,
3.0
R
S
I
F
= 100 mA
F = 100 MHz
(W)
–
–
–
–
1.35 Max.
–
1.5 Max.
Typ. Carrier
Lifetime
I
F
= 10 mA
(ns)
100
100
400
400
1000
400
700
Part Number
SMP1345-040LF
SMP1340-040LF
SMP1321-040LF
SMP1320-040LF
SMP1352-040LF
SMP1322-040LF
SMP1302-040LF
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