S E M I C O N D U C T O R
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
December 1995
Features
• 45A, 60V
• r
DS(ON)
= 0.028Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175
o
C Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
RFG45N06
RFP45N06
RF1S45N06
RF1S45N06SM
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
RFG45N06
RFP45N06
F1S45N06
F1S45N06
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM9A.
Formerly developmental type TA49028.
JEDEC TO-263AB
M
A
Symbol
G
D
A
A
DRAIN
(FLANGE)
GATE
SOURCE
S
Absolute Maximum Ratings
T
C
= +25
o
C
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
±20
45
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
AM
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
A
W
W/
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
©
Harris Corporation 1995
File Number
3574.2
3-33
Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 60V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 45A, V
GS
= 10V
V
DD
= 30V, I
D
= 45A
R
L
= 0.667Ω, V
GS
= +10V
R
GS
= 3.6Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DD
= 48V,
I
D
= 45A,
R
L
= 1.07Ω
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
12
74
37
16
-
125
67
3.7
2050
600
200
-
-
MAX
-
4
1
50
100
0.028
120
-
-
-
-
80
150
80
4.5
-
-
-
1.14
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(10)
Q
G(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
3-34
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
400
T
C
= +25
o
C
10
I
D
, DRAIN CURRENT (A)
100
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
100
10ms
100ms
DC
Z
θ
JC
, NORMALIZED
THERMAL RESPONSE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-2
10
-1
10
0
10
1
P
DM
V
DSS
MAX = 60V
SINGLE PULSE
0.01
10
-4
10
-3
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE- OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
50
I
DM
, PEAK CURRENT CAPABILITY (A)
10
3
T
C
= +25
o
C
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
V
GS
= 20V
I = I
175
–
T
C
-
25
-----------------------
150
I
D
, DRAIN CURRENT (A)
40
30
20
V
GS
= 10V
10
2
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
40
10
-3
10
-2
10
-1
10
0
10
1
10
2
t, PULSE WIDTH (ms)
10
3
10
4
10
0
25
50
75
100
125
(
o
C)
150
175
T
C
, CASE TEMPERATURE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
I
D(ON)
, ON STATE DRAIN CURRENT (A)
125
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
100
PULSE DURATION = 250µs, T
C
= +25
o
C
V
GS
= 8V
V
GS
= 7V
125
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= 15V
+25
o
C
100
+175
o
C
75
75
50
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
50
25
25
0
0.0
1.5
3.0
4.5
6.0
V
DS,
DRAIN-TO-SOURCE VOLTAGE (V)
7.5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3-35
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
r
DS(ON)
, NORMALIZED ON RESISTANCE
(Continued)
2.5
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 45A
V
GS(TH)
, NORMALIZED GATE
THRESHOLD VOLTAGE
2.0
V
GS
= V
DS
, I
D
= 250µA
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
-80
-40
0
40
80
120
o
160
200
0.0
-80
-40
0
40
80
120
o
160
200
T
J,
JUNCTION TEMPERATURE ( C)
T
J,
JUNCTION TEMPERATURE ( C)
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
I
D
= 250µA
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
BV
DSS,
NORMALIZED DRAIN-TO-SOURCE
2.0
BREAKDOWN VOLTAGE
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
(
o
C)
160
200
T
J,
JUNCTION TEMPERATURE
0
25
50
75
100
125
(
o
C)
150
175
T
C
, CASE TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
V
GS
= 0V, f = 1MHz
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
60
V
DS,
DRAIN SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
V
DD
= BV
DSS
7.5
10
V
GS,
GATE-SOURCE VOLTAGE (V)
4000
C, CAPACITANCE (pF)
3000
C
ISS
2000
C
OSS
1000
C
RSS
0
0
5
10
15
20
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
30
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
5.0
15
2.5
R
L
= 1.33Ω
I
G(REF)
= 1.5mA
V
GS
= 10V
0
20
0
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
3-36
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
300
I
AS,
AVALANCHE CURRENT (A)
(Continued)
100
STARTING T
J
= +25
o
C
10
STARTING T
J
= +150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
1
0.01
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
BV
DSS
t
P
I
AS
V
DS
V
DD
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
R
G
V
DS
L
+
-
V
DD
DUT
0V
t
AV
t
P
I
L
0.01Ω
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
t
ON
t
D(ON)
t
R
V
DS
90%
t
OFF
t
D(OFF)
t
F
90%
V
DD
R
L
V
DS
V
GS
10%
10%
0V
90%
R
GS
DUT
V
GS
10%
50%
PULSE WIDTH
50%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
3-37
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