CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 150
o
C.
2. Repetitive Rating: pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 9)
V
GS
= V
DS
, I
D
= 250µA (Figure 8)
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±20V
I
D
= 40A, V
GS
= 10V (Figure 7)
V
DD
= 50V, I
D
= 20A,
R
L
= 2.5Ω, V
GS
= 10V, R
GS
= 4.2
Ω
(Figure 11)
T
C
= 25
o
C
T
C
= 150
o
C
MIN
100
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 80V,
I
D
= 40A,
R
L
= 2.0Ω
(Figures 11)
-
-
-
-
TO-247
TO-220AB and TO-263AB
-
-
TYP
-
-
-
-
-
-
-
17
30
42
20
-
-
-
-
-
-
-
MAX
-
4
1
50
±100
0.040
80
-
-
-
-
100
300
150
7.5
0.94
30
62
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
o
C/W
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
R
θJC
R
θJA
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 40A
I
SD
= 40A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
200
UNITS
V
ns
4-451
RFG40N10, RFP40N10, RF1S40N10SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
40
32
24
16
8
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
V
DSS(MAX)
= 100V
I
AS,
AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
DC OPERATION
100
ST
AR
TIN
ST
AR
TIN
GT
J
=
25
o
10
C
GT
10
J
=
15
o
0
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) LN [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
t
AV,
TIME IN AVALANCHE (ms)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
100
7V
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D,
DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0V
=1
80
I
D
, DRAIN CURRENT (A)
V
GS
V
G
S
=
80
-55
o
C
25
o
C
60
V
GS
= 6V
175
o
C
60
40
V
GS
= 5V
20
V
GS
= 4V
0
0
2
4
6
8
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
10
40
20
0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
4-452
RFG40N10, RFP40N10, RF1S40N10SM
Typical Performance Curves
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 40A
NORMALIZED GATE
THRESHOLD VOLTAGE
Unless Otherwise Specified
(Continued)
1.50
1.25
1.00
0.75
0.50
0.25
V
GS
= V
DS
I
D
= 250µA
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
200
T
J,
JUNCTION TEMPERATURE (
o
C)
0
-50
0
50
100
150
200
T
J,
JUNCTION TEMPERATURE (
o
C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
6000
5000
C, CAPACITANCE (pF)
1.5
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
4000
3000
2000
C
OSS
1000
C
RSS
0
C
ISS
1.0
0.5
0
-50
0
50
100
150
200
T
J,
JUNCTION TEMPERATURE (
o
C)
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
100
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
V
DD
= BV
DSS
75
V
DD
= BV
DSS
7.5
50
0.75 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.25 BV
DSS
R
L
= 2.5Ω
I
g(REF)
= 2.25mA
V
GS
= 10V
0
20
5.0
25
2.5
0
I
g(REF)
I
g(ACT)
t, TIME (µs)
80
I
g(REF)
I
g(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
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