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BYW51G-200-TR

Description
10A, 200V, SILICON, RECTIFIER DIODE, PLASTIC, D2PAK-3
CategoryDiscrete semiconductor    diode   
File Size168KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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BYW51G-200-TR Overview

10A, 200V, SILICON, RECTIFIER DIODE, PLASTIC, D2PAK-3

BYW51G-200-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-263
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time25 weeks 5 days
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.15 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current15 µA
Maximum reverse recovery time0.035 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
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