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1N5402GP

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size76KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

1N5402GP Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

1N5402GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-201AD
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Features
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
1N5400GP
THRU
1N5408GP
3 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-201AD
Low Current Leakage
Metalurgically Bonded Construction
Low Forward Voltage
High Current Capability
Glass Passivated Junction
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
1N5400GP
1N5401GP
1N5402GP
1N5404GP
1N5406GP
1N5407GP
1N5408GP
---
---
---
---
---
---
---
35V
70V
140V
280V
420V
560V
700V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
3.0A
T
A
= 105°C
Current
Peak Forward Surge
I
FSM
200A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 3.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
40pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
www.mccsemi.com
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