FCB11N60TM datasheet, PDF - EEWORLD Datasheet

FCB11N60TM: DescriptionPower MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK, 800-REEL; CategoryDiscrete semiconductor The transistor; File Size493KB，10 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK, 800-REEL

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-G2
Manufacturer packaging code	418AJ
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	1 week
Samacsys Confidence	3
Samacsys Status	Released
Samacsys PartID	166914
Samacsys Pin Count	4
Samacsys Part Category	Integrated Circuit
Samacsys Package Category	TO-XXX (Inc. DPAK)
Samacsys Footprint Name	TO263(DDPAK)
Samacsys Released Date	2015-04-13 16:42:43
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	11 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.38 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	33 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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