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BUR22CECC-D

Description
Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB,1 Pages
ManufacturerSEMELAB
Download Datasheet Parametric View All

BUR22CECC-D Overview

Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUR22CECC-D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSEMELAB
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)40 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
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