JAN1N6634US datasheet, PDF - EEWORLD Datasheet

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JAN1N6634US: DescriptionZener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size59KB，2 Pages; ManufacturerCompensated Devices Inc.

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Zener Diode, 3.9V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

JAN1N6634US Parametric

Parameter Name	Attribute value
Maker	Compensated Devices Inc.
package instruction	HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code	unknown
Is Samacsys	N
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JESD-30 code	O-LELF-R2
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Guideline	MIL-19500/356H
Nominal reference voltage	3.9 V
surface mount	YES
technology	ZENER
Terminal form	WRAP AROUND
Terminal location	END
Maximum voltage tolerance	5%
Working test current	320 mA
Base Number Matches	1

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• AVAILABLE IN

JAN, JANTX, JANTXV,

AND

JANS

PER MIL-PRF-19500/356

• 5 WATT ZENER DIODES

• NON CAVITY CONSTRUCTION

• METALLURGICALLY BONDED

1N6632US

THRU

1N6637US

AND

1N5968US

AND

1N5969US

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Power Dissapation: 5W @ TEC=+125°C

Power Derating: 100mW/°C above TEC=+125°C

Forward Voltage: 1.5 V dc @ IF=1A dc

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified

NOMINAL

TEST

ZENER CURRENT

VOLTAGE

IZT

VZ@IZT

±5%

VOLTS

1N6632US

1N6633US

1N6634US

1N6635US

1N6636US

1N6637US

1N5968US

1N5969US

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

380

350

320

290

260

240

220

OHMS

3.0

2.5

2.0

1.5

1.0

OHMS

500

450

400

1000

VOLTS

0.90

0.80

0.75

0.70

0.60

0.50

0.4

0.5

MAXIMUM ZENER IMPEDANCE

TYPE

ZZ@IZT

ZZK(1)

IZK=5mA

MAXIMUM REVERSE

LEAKAGE CURRENT

VOLTAGE

DIM

SURGE

CURRENT

IZSM

AMPS

20.0

18.7

17.6

16.4

15.3

14.4

MILLIMETERS

MIN

MAX

3.48

3.76

0.48

0.71

5.08

5.72

0.03MIN.

INCHES

MIN MAX

.137 .148

0.019 0.028

.200 .225

.001MIN.

REGULATION

VOLTS

1.0

4.28

4.74

FIGURE 1

300

250

175

5000

1000

DESIGN DATA

CASE:

D-5B, Hermetically sealed glass

case, PER MIL-PRF 19500/356

LEAD FINISH:

Tin / Lead

NOTE 1

IZK=1.0 mA for 1N5969

THERMAL RESISTANCE: (R

OJEC):

10 ˚C/W maximum at L = 0

THERMAL IMPEDANCE: (Z

OJX): 3

˚C/W maximum

POLARITY:

Diode to be operated with

the banded (cathode) end positive.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) of this device is approximately

+ 4PPM / °C. The COE of the Mounting

Surface System should be selected to

provide a suitable match with this

device.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

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