Schottky Barrier Beam Lead
and Packaged Bridge Quads
Features
q
q
q
q
MA4E400 Series
V3.00
Case Styles
q
Small Physical Size for Microstrip Mounting
High Reliability
Closely Matched Junctions for High Isolation
Low, Medium and High Barrier Diodes Available
to Match RF Power
Minimum Parasitics for Broadband Designs
Description
Each Schottky barrier diode quad consists of four closely
matched diodes connected in a bridge configuration. The
four diodes are formed monolithically to assure close
matching of electrical characteristics, namely capacitance,
forward voltage and series resistance. The silicon which
originally connected the diodes in slice form is etched
away so that each individual diode is in beam lead form.
The beam lead construction assures minimum junction
capacitance, minimum connection lead inductance and
permits the interconnection of the diodes into the bridge
configuration at the wafer level.
Three barrier height levels are available. The MA4E400L
series features a low barrier for lower power applications.
The MA4E400M and MA4E400H series feature medium
and high barriers respectively. The RF frequencies can
range up to 18.0 GHz with selection of an appropriate
junction capacitance.
These parts are available as beam leads or in four stripline
packages.
906
227
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Schottky Barrier Beam Lead and Packaged Bridge Quads
Electrical Specifications at 25°C
Junction
1,2
Capacitance
C
j
(pF)
Min.
Max.
0.30
0.15
0.05
0.30
0.15
0.05
0.30
0.15
0.05
0.60
0.40
0.25
0.60
0.40
0.25
0.60
0.40
0.25
Maximum
4
Junction
Capacitance
Difference
∆C
j
(pF)
0.10
0.10
0.05
0.10
0.10
0.05
0.10
0.10
0.05
Typical
4
Forward
Voltage
V
F
(Volts)
0.250
0.270
0.300
0.350
0.370
0.410
0.550
0.570
0.610
MA4E400 Series
V3.00
Model*
Number
MA4E402L
MA4E401L
MA4E400L
MA4E402M
MA4E401M
MA4E400M
MA4E402H
MA4E401H
MA4E400H
Barrier
Height
Low
Low
Low
Medium
Medium
Medium
High
High
High
Frequency
Band
S
CX
Ku
S
C-X
Ku
S
C-X
Ku
Maximum
Resistance
R
T
(Ohms)
3
Maximum
Forward
Voltage
Difference
∆V
F
(Volts)
0.020
0.020
0.020
0.020
0.020
0.020
0.020
0.020
0.020
Minimum
5
Reverse
Voltage
V
R
(Volts)
2.0
2.0
2.0
3.0
3.0
3.0
5.0
5.0
5.0
7
10
12
7
10
12
7
10
12
* Case styles are specified by adding the case style number as a suffix to
the basic part number. For example, an MA4E402L-228 is a low barrier
bridge quad housed in the 228 case style. The available packages are
226, 227, 228 or 963. To order a beam lead part add “- 906”.
Notes:
1. C
j
is measured across diagonal leads at V
R
= 0V and f = 1 MHz.
2. C
T
= C
j
+ C
P
is the package capacitance.
3. Series resistance, R
S
, is determined by subtracting the junction
resistance, Rj, from the measured value of 10 mA dynamic (slope)
resistance, RT:
R
S
= R
T
- R
j
Ohms
Junction resistance is computed from the following equation:
R
j
= 26/1
F
Ohms
I
F
is the forward bias current in mA.
4.
∆C
j
is measured across adjacent quad leads at V
R
= 0V and
f = 1 MHz.
5. V
R
is measured at I
R
= 10 µA
Absolute Maximum Ratings at 25°C
Parameter
Maximum Power Dissipation
(derate linearly to zero allowable
dissipation at 150°C)
Absolute Maximum
75 mW/ junction
Operating and Storage
Temperature Range of Junctions
Plastic Packages
- 65°C to + 150°C
-65°C to +125°C
(Case Styles 227, 228, 963)
-65°C to +150°C
(Case Style 226)
2g (Case Style 906)
Applications
These beam lead Schottky bridge quads are commonly
used in sampling and modulator applications. The small
case sizes and minimal electrical parasitics are well suited
for miniature broadband components.
High speed switching, a necessary sampling requirement,
is accomplished with the Schottky diode. Schottky diodes
have switching speeds in the picosecond range. The four
closely matched junctions assure high inherent isolation
between the signal and sampler pulse circuits.
The different barrier heights enable the designer to select
a diode with an appropriate barrier such that the RF sig-
nal input to the sampler will not cause the diodes in the
bridge to conduct. The diode circuit configuration is
shown on the next page.
Ceramic Package
Beam Strength
Specifications Subject to Change Without Notice.
2
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Schottky Barrier Beam Lead and Packaged Bridge Quads
Diode Circuit Configuration
MA4E400 Series
V3 .00
Case Styles
(See appendix for complete dimensions)
•
•
(Hermetic Ceramic Package)
(Plastic Encapsulation)
(Plastic Encapsulation)
(Beam Lead)
(Plastic Encapsulation)
•
Orientation Mark
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
3
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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